CY62177EV30LL-55ZXI Cypress Semiconductor Corp, CY62177EV30LL-55ZXI Datasheet - Page 3

• Manufacturer Part Number: CY62177EV30LL-55ZXI
• Description: IC SRAM 32MBIT 55NS LP 48-TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62177EV30LL-55ZXI

• Memory Size: 32M (4Mx8, 2Mx16)
• Package / Case: 48-TSOP I
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.7 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 55 ns
• Supply Voltage (max): 3.7 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 45 mA
• Organization: 2 M x 16, 4 M x 8
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Operating Supply Voltage: 3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied ........................................... –55°C to + 125°C
Supply Voltage to Ground
Potential ......................................... –0.3V to V
DC Voltage Applied to Outputs
in High Z State
Electrical Characteristics
Over the Operating Range
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Notes
Document #: 001-09880 Rev. *D
V
V
V
V
I
I
I
I
C
C
7. V
8. V
9. Full Device AC operation assumes a 100 μs ramp time from 0 to V
10. Under DC conditions the device meets a V
11. Chip enables (CE
IX
OZ
CC
SB2
Parameter
Parameter
OH
OL
IH
IL
IN
OUT
applicable to TSOP I package only.
IL(min)
IH(max)
[5, 11]
= –2.0V for pulse durations less than 20 ns.
= V
CC
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
Current
Automatic CE
Power Down
Current—CMOS Inputs
Input Capacitance
Output Capacitance
+ 0.75V for pulse durations less than 20 ns.
[7, 8]
CC
1
and CE
Operating Supply
........................ –0.3V to V
Description
Description
2
) need to be tied to CMOS levels to meet the I
IL
of 0.8V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.7V. This is
I
I
I
I
V
V
V
V
GND < V
GND < V
f = f
f = 1 MHz
CE
V
f = 0, V
T
OH
OH
OL
OL
A
CC
CC
CC
CC
IN
= 25°C, f = 1 MHz, V
1
= 0.1 mA
= 2.1 mA
Max
= –0.1 mA
= –1.0 mA
> V
= 2.7V to 3.7V
= 2.7V to 3.7V
CC (max)
= 2.2V to 2.7V
= 2.2V to 2.7V
> V
CC(max)
CC
CC
= 1/t
CC
I
O
< V
= 3.7V
– 0.2V or V
< V
– 0.2V or CE
RC
+ 0.3V
+ 0.3V
CC
Test Conditions
Test Conditions
CC
CC
(min) and 200 μs wait time after V
, Output Disabled
SB2
CC
IN
V
V
V
V
For VFBGA package
For TSOP I package
V
I
CMOS levels
OUT
/ I
CC
CC
CC
CC
CC
2
< 0.2V,
CCDR
= V
< 0.2V,
= 2.20V
= 2.70V
= 2.20V
= 2.70V
DC Input Voltage
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch Up Current ..................................................... >200 mA
Operating Range
= V
= 0 mA
CY62177EV30LL
CC(typ)
spec. Other inputs can be left floating.
CC(max)
Device
CC
[7, 8]
stabilization.
Industrial
Range
.................... –0.3V to V
–0.3
–0.3
–0.3
Min
2.0
2.4
1.8
2.2
–1
–1
CY62177EV30 MoBL
Max
15
15
Typ
–40°C to +85°C 2.2V to 3.7V
Temperature
55 ns
4.5
35
3
Ambient
[6]
V
V
CC
CC
0.7
Max
0.4
0.4
0.6
0.8
5.5
CC (max)
+1
+1
45
25
+ 0.3V
+ 0.3V
[10]
Unit
pF
pF
Page 3 of 13
V
+ 0.3V
CC
Unit
mA
mA
μA
μA
μA
[9]
V
V
V
V
V
V
V
V
V
®
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