CY62177EV30LL-55ZXI Cypress Semiconductor Corp, CY62177EV30LL-55ZXI Datasheet - Page 4

• Manufacturer Part Number: CY62177EV30LL-55ZXI
• Description: IC SRAM 32MBIT 55NS LP 48-TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62177EV30LL-55ZXI

• Memory Size: 32M (4Mx8, 2Mx16)
• Package / Case: 48-TSOP I
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.7 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 55 ns
• Supply Voltage (max): 3.7 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 45 mA
• Organization: 2 M x 16, 4 M x 8
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Operating Supply Voltage: 3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Table 1. AC Test Loads
Data Retention Characteristics
Notes
Document #: 001-09880 Rev. *D
Θ
Θ
V
I
t
t
12. Tested initially and after any design or process changes that may affect these parameters.
13. Full device operation requires linear V
14. BHE.BLE is the AND of both BHE and BLE. Chip is deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
Parameter
CCDR
CDR
R
Parameter
DR
JA
JC
Parameter
[13]
[12]
BHE
R
V
CE
CE
R1
R2
TH
[11]
TH
1
2
.
or
BLE
V
or
CC
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
OUTPUT
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CC
Description
INCLUDING
for Data Retention
V
CC
JIG AND
SCOPE
30 pF
Description
16667
15385
8000
2.5V
1.20
CC
ramp from V
R1
Still Air, soldered on a 3 × 4.5 inch,
2-layer printed circuit board
V
t
CDR
R2
CC(min)
Figure 3. AC Test Loads and Waveforms
Over the Operating Range
Figure 4. Data Retention Waveform
DR
to V
Test Conditions
Rise Time = 1 V/ns
CC(min)
V
V
CC
IN
V
> V
= 1.5V, CE
CC
> 100 μs or stable at V
GND
CC
Equivalent to: THEVENIN EQUIVALENT
DATA RETENTION MODE
– 0.2V or V
1
10%
Conditions
OUTPUT
V
> V
DR
1554
3.3V
1103
1.75
645
CC
> 1.5 V
IN
CC(min)
– 0.2V, CE
ALL INPUT PULSES
< 0.2V
90%
> 100 μs.
TSOPI
44.66
12.12
[14]
2
< 0.2V,
R
TH
90%
CY62177EV30 MoBL
V
10%
CC(min)
Min
Fall Time = 1 V/ns
1.5
t
RC
0
t
R
V
FBGA
28.12
12.06
Typ
[6]
Unit
Ω
Ω
Ω
V
Max
17
Page 4 of 13
°C/W
°C/W
Unit
Unit
μA
ns
ns
V
®
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