CY62177EV30LL-55ZXI Cypress Semiconductor Corp, CY62177EV30LL-55ZXI Datasheet - Page 6

IC SRAM 32MBIT 55NS LP 48-TSOP

CY62177EV30LL-55ZXI

Manufacturer Part Number
CY62177EV30LL-55ZXI
Description
IC SRAM 32MBIT 55NS LP 48-TSOP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62177EV30LL-55ZXI

Memory Size
32M (4Mx8, 2Mx16)
Package / Case
48-TSOP I
Format - Memory
RAM
Memory Type
SRAM
Speed
55ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.7 V
Operating Temperature
-40°C ~ 85°C
Access Time
55 ns
Supply Voltage (max)
3.7 V
Supply Voltage (min)
2.2 V
Maximum Operating Current
45 mA
Organization
2 M x 16, 4 M x 8
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Operating Supply Voltage
3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62177EV30LL-55ZXI
Manufacturer:
XILINX
Quantity:
1 000
Part Number:
CY62177EV30LL-55ZXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY62177EV30LL-55ZXI
0
Switching Waveforms
Notes
Document #: 001-09880 Rev. *D
19. The device is continuously selected. OE, CE
20. WE is HIGH for read cycle.
21. Address valid prior to or coincident with CE
DATA OUT
DATA OUT
ADDRESS
ADDRESS
CURRENT
BHE
SUPPLY
/
BLE
V
CE
CE
OE
CC
1
2
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
Figure 5. Read Cycle 1 (Address Transition Controlled)
t
LZCE
t
LZBE
1
, BHE, BLE transition LOW and CE
1
t
t
= V
ACE
LZOE
Figure 6. Read Cycle 2 (OE Controlled)
IL
t
, BHE and/or BLE = V
50%
OHA
t
t
DOE
DBE
t
AA
t
RC
IL
, and CE
2
transition HIGH.
2
t
RC
= V
IH
.
DATA VALID
[20, 21]
[19, 20]
CY62177EV30 MoBL
t
DATA VALID
HZOE
t
HZBE
t
HZCE
t
PD
50%
IMPEDANCE
HIGH
Page 6 of 13
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