AT24C256N-10SC Atmel, AT24C256N-10SC Datasheet - Page 7
![IC EEPROM 256KBIT 1MHZ 8SOIC](/photos/6/50/65032/453-8-soic_sml.jpg)
AT24C256N-10SC
Manufacturer Part Number
AT24C256N-10SC
Description
IC EEPROM 256KBIT 1MHZ 8SOIC
Manufacturer
Atmel
Datasheet
1.AT24C256N-10SC.pdf
(15 pages)
Specifications of AT24C256N-10SC
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
256K (32K x 8)
Speed
1MHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
AT24C256N10SC
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AT24C256N-10SC-2.7
Manufacturer:
ATM
Quantity:
13
Device Addressing
The 128K/256K EEPROM requires an 8-bit device address
word following a start condition to enable the chip for a read
or write operation (refer to Figure 1). The device address
word consists of a mandatory one, zero sequence for the
first five most significant bits as shown. This is common to
all 2-wire EEPROM devices.
The 128K/256K uses the two device address bits A1, A0 to
allow as many as four devices on the same bus. These bits
must compare to their corresponding hardwired input pins.
The A1 and A0 pins use an internal proprietary circuit that
biases them to a logic low condition if the pins are allowed
to float.
The eighth bit of the device address is the read/write opera-
tion select bit. A read operation is initiated if this bit is high
and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will
output a zero. If a compare is not made, the device will
return to a standby state.
DATA SECURITY: The AT24C128/256 has a hardware
data protection scheme that allows the user to write protect
the whole memory when the WP pin is at V
Write Operations
BYTE WRITE: A write operation requires two 8-bit data
word addresses following the device address word and
acknowledgment. Upon receipt of this address, the
EEPROM will again respond with a zero and then clock in
the first 8-bit data word. Following receipt of the 8-bit data
word, the EEPROM will output a zero. The addressing
device, such as a microcontroller, then must terminate the
write sequence with a stop condition. At this time the
EEPROM enters an internally-timed write cycle, t
nonvolatile memory. All inputs are disabled during this
write cycle and the EEPROM will not respond until the write
is complete (refer to Figure 2).
PAGE WRITE: The 128K/256K EEPROM is capable of 64-
byte page writes.
A page write is initiated the same way as a byte write, but
the microcontroller does not send a stop condition after the
first data word is clocked in. Instead, after the EEPROM
acknowledges receipt of the first data word, the microcon-
troller can transmit up to 63 more data words. The
EEPROM will respond with a zero after each data word
received. The microcontroller must terminate the page
write sequence with a stop condition (refer to Figure 3).
The data word address lower 6 bits are internally incre-
mented following the receipt of each data word. The higher
data word address bits are not incremented, retaining the
memory page row location. When the word address, inter-
nally generated, reaches the page boundary, the following
byte is placed at the beginning of the same page. If more
than 64 data words are transmitted to the EEPROM, the
CC
.
WR
, to the
data word address will “roll over” and previous data will be
overwritten. The address “roll over” during write is from the
last byte of the current page to the first byte of the same
page.
ACKNOWLEDGE POLLING: Once the internally-timed
write cycle has started and the EEPROM inputs are dis-
abled, acknowledge polling can be initiated. This involves
sending a start condition followed by the device address
word. The read/write bit is representative of the operation
desired. Only if the internal write cycle has completed will
the EEPROM respond with a zero, allowing the read or
write sequence to continue.
Read Operations
Read operations are initiated the same way as write opera-
tions with the exception that the read/write select bit in the
device address word is set to one. There are three read
operations: current address read, random address read
and sequential read.
CURRENT ADDRESS READ: The internal data word
address counter maintains the last address accessed dur-
ing the last read or write operation, incremented by one.
This address stays valid between operations as long as the
chip power is maintained. The address “roll over” during
read is from the last byte of the last memory page, to the
first byte of the first page.
Once the device address with the read/write select bit set
to one is clocked in and acknowledged by the EEPROM,
the current address data word is serially clocked out. The
microcontroller does not respond with an input zero but
does generate a following stop condition (refer to Figure 4).
RANDOM READ: A random read requires a “dummy” byte
write sequence to load in the data word address. Once the
device address word and data word address are clocked in
and acknowledged by the EEPROM, the microcontroller
must generate another start condition. The microcontroller
now initiates a current address read by sending a device
address with the read/write select bit high. The EEPROM
acknowledges the device address and serially clocks out
the data word. The microcontroller does not respond with a
zero but does generate a following stop condition (refer to
Figure 5).
SEQUENTIAL READ: Sequential reads are initiated by
either a current address read or a random address read.
After the microcontroller receives a data word, it responds
with an acknowledge. As long as the EEPROM receives an
acknowledge, it will continue to increment the data word
address and serially clock out sequential data words. When
the memory address limit is reached, the data word
address will “roll over” and the sequential read will con-
tinue. The sequential read operation is terminated when
the microcontroller does not respond with a zero but does
generate a following stop condition (refer to Figure 6).
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