AT49F4096A-12RC Atmel, AT49F4096A-12RC Datasheet - Page 11

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AT49F4096A-12RC

Manufacturer Part Number
AT49F4096A-12RC
Description
IC FLASH 4MBIT 120NS 44SOIC
Manufacturer
Atmel
Datasheet

Specifications of AT49F4096A-12RC

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8 or 256K x 16)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-SOIC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
AT49F4096A12RC
Program Cycle Characteristics
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes:
1604F–FLASH–4/04
Symbol
t
t
t
t
t
t
t
t
BP
AS
AH
DS
DH
WP
WPH
EC
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased.
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
(See note 4 under Command Definitions.)
Parameter
Byte/Word Programming Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Erase Cycle Time
A0-A17
DATA
WE
A0-A17
OE
CE
DATA
WE
OE
CE
(1)
t
AS
t AS
5555
5555
t AH
WORD 0
t AH
AA
AA
t WP
t DS
t DS
t WP
2AAA
2AAA
t DH
WORD 1
55
t DH
55
5555
t WPH
WORD 2
5555
80
PROGRAM CYCLE
t WPH
A0
5555
WORD 3
AA
ADDRESS
INPUT DATA
2AAA
WORD 4
55
Min
50
50
50
40
0
0
Note 2
t BP
WORD 5
Note 3
Typ
10
t EC
5555
AT49F4096A
AA
Max
50
5
seconds
Units
µs
ns
ns
ns
ns
ns
ns
11

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