AT45DB321C-TC Atmel, AT45DB321C-TC Datasheet - Page 3

IC FLASH 32MBIT 40MHZ 28TSOP

AT45DB321C-TC

Manufacturer Part Number
AT45DB321C-TC
Description
IC FLASH 32MBIT 40MHZ 28TSOP
Manufacturer
Atmel
Datasheet

Specifications of AT45DB321C-TC

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
32M (8192 pages x 528 bytes)
Speed
40MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
3. Block Diagram
4. Memory Array
Figure 4-1.
3387M–DFLASH–2/08
SECTOR ARCHITECTURE
266,112 bytes (252K + 8064)
270,336 bytes (256K + 8K)
270,336 bytes (256K + 8K)
270,336 bytes (256K + 8K)
270,336 bytes (256K + 8K)
SECTOR 14 = 512 Pages
SECTOR 15 = 512 Pages
SECTOR 1 = 512 Pages
SECTOR 2 = 512 Pages
SECTOR 0b = 504 Pages
SECTOR 0a = 8 Pages
4224 bytes (4K + 128)
Memory Architecture Diagram
To provide optimal flexibility, the memory array of the AT45DB321C is divided into three levels of
granularity comprising of sectors, blocks, and pages. The “Memory Architecture Diagram” illus-
trates the breakdown of each level and details the number of pages per sector and block. All
program operations to the DataFlash occur on a page by page basis. The erase operations can
be performed at the block or page level.
RDY/BUSY
RESET
GND
VCC
SCK
WP
CS
SECTOR 0a
PAGE (528 BYTES)
BUFFER 1 (528 BYTES)
BLOCK ARCHITECTURE
Block = 4224 bytes
BLOCK 1022
BLOCK 1023
BLOCK 126
BLOCK 127
BLOCK 128
BLOCK 129
BLOCK 62
BLOCK 63
BLOCK 64
BLOCK 65
BLOCK 0
BLOCK 1
BLOCK 2
(4K + 128)
SI
FLASH MEMORY ARRAY
I/O INTERFACE
8 Pages
PAGE ARCHITECTURE
BUFFER 2 (528 BYTES)
AT45DB321C
Page = 528 bytes
SO
PAGE 8189
PAGE 8190
PAGE 8191
PAGE 14
PAGE 15
PAGE 16
PAGE 17
PAGE 18
PAGE 0
PAGE 1
PAGE 6
PAGE 7
PAGE 8
PAGE 9
(512 + 16)
3

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