MT48H8M32LFB5-8 IT TR Micron Technology Inc, MT48H8M32LFB5-8 IT TR Datasheet - Page 56
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MT48H8M32LFB5-8 IT TR
Manufacturer Part Number
MT48H8M32LFB5-8 IT TR
Description
IC SDRAM 256MBIT 8NS 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48V8M32LFB5-8_IT_TR.pdf
(75 pages)
Specifications of MT48H8M32LFB5-8 IT TR
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
8ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1053-1
MT48H8M32LFB5-8 IT
MT48H8M32LFB5-8 IT
Timing Diagrams
Figure 34: Initialize and Load Mode Register
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
COMMAND
A0-A9, A11
DQM 0-3
BA0, BA1
A10
CKE
CLK
DQ
5
Power-up:
V
CLK stable
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T = 100µs
and
t
CMS
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CKS
Notes: 1. The two AUTO REFRESH commands at T9 and T19 may be applied before either LOAD
T0
NOP
t
High-Z
CMH
t
CKH
2. PRE = PRECHARGE command, LMR = LOAD MODE REGISTER command, AR = AUTO
3. Optional REFRESH command.
4. The load mode register for both MR/EMR and 2 AUTO REFRESH commands can be in any
5. Device timing is -10 with 100 MHz clock.
MODE REGISTER (LMR) command.
REFRESH command, ACT = ACTIVE command, RA = Row Address, BA = Bank Address.
order. However, all must occur prior to an ACTIVE command.
See Table 15, Electrical Characteristics and Recommended AC Operating Conditions, on
page 48.
ALL BANKS
t
AS
PRE
T1
t AH
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CK
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Load Extended
Mode Register
t AS
t AS t AH
BA0 = L,
BA1 = H
LMR 4
CODE
CODE
T3
t AH
t
MRD
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Load Mode
Register
BA0 = L,
BA1 = L
56
CODE
CODE
LMR 4
T5
t
1,2
MRD
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ALL BANKS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
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PRE 3
T7
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AH
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256Mb: x32 Mobile SDRAM
AR 4
T9
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©2003 Micron Technology, Inc. All rights reserved.
T19
AR 4
Timing Diagrams
t
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DON’T CARE
T29
ACT 4
RA
RA
BA