MT45W4MW16BCGB-701 WT Micron Technology Inc, MT45W4MW16BCGB-701 WT Datasheet - Page 22

• Manufacturer Part Number: MT45W4MW16BCGB-701 WT
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BCGB-701 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 15:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
(except A[19:18])
A[19:18]
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
Register READ, Synchronous Mode Followed by READ ARRAY Operation
OE#
CLK
CRE
CE#
2
Notes:
Latch control register value
High-Z
1. Nondefault BCR settings for synchronous mode register READ followed by READ ARRAY
2. A[19:18] = 00b to read RCR, 10b to read BCR, and 01b to read DIDR.
3. CE# must remain LOW to complete a burst-of-one READ. WAIT must be monitored—addi-
t CSP
t CEW
t SP
t SP
t SP
t SP
operation: latency code 2 (3 clocks); WAIT active LOW; WAIT asserted during delay.
tional WAIT cycles caused by refresh collisions require a corresponding number of addi-
tional CE# LOW cycles.
t HD
t HD
t HD
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
t ABA
Latch control register address
t OLZ
Note 3
t BOE
t ACLK
22
Valid
CR
t KOH
t HD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t HZ
t OHZ
t CBPH
High-Z
Address
Address
Don’t Care
©2005 Micron Technology, Inc. All rights reserved.
Undefined
Registers
Valid
data