MT46V16M8P-75:D TR Micron Technology Inc, MT46V16M8P-75:D TR Datasheet - Page 65

• Manufacturer Part Number: MT46V16M8P-75:D TR
• Description: IC DDR SDRAM 128MBIT 66TSOP
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V16M8P-75:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (16M x 8)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Organization: 16Mx8
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 750ps
• Maximum Clock Rate: 266MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 130mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 37:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
Consecutive WRITE-to-WRITE
Notes:
t
DQSS (NOM)
COMMAND
ADDRESS
1. DI b (or n) = data-in from column b (or column n).
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
DQS
CK#
DM
DQ
CK
WRITE
Bank,
Col b
T0
t
DQSS
NOP
DI
T1
b
65
T1n
WRITE
Bank,
Col n
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T2n
128Mb: x4, x8, x16 DDR SDRAM
T3
NOP
DI
n
DON’T CARE
T3n
©2004 Micron Technology, Inc. All rights reserved.
T4
NOP
TRANSITIONING DATA
T4n
Operations
T5
NOP