MT46V64M8P-75:D Micron Technology Inc, MT46V64M8P-75:D Datasheet - Page 68

• Manufacturer Part Number: MT46V64M8P-75:D
• Description: IC DDR SDRAM 512MBIT 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V64M8P-75:D

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 40:
Figure 41:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. L; Core DDR Rev. A 4/07 EN
Nonconsecutive WRITE-to-WRITE
Random WRITE Cycles
Notes:
Notes:
t
DQSS (NOM)
COMMAND
COMMAND
1. DI b (or n) = data-in from column b (or column n).
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
1. DI b (or x or n or a or g) = data-in from column b (or column x, or column n, or column a, or
2. b', x', n', a' or g' indicate the next data-in following DO b, DO x, DO n, DO a, or DO g,
3. Programmed BL = 2, BL = 4, or BL = 8 in cases shown.
4. Each WRITE command may be to any bank.
ADDRESS
ADDRESS
column g).
respectively.
DQS
DQS
CK#
DM
DQ
CK#
DM
DQ
CK
CK
WRITE
WRITE
Bank,
Col b
Bank,
Col b
T0
T0
t
DQSS (NOM)
t
DQSS
WRITE
Bank,
NOP
Col x
T1
DI
T1
DI
b
b
68
T1n
T1n
DI
b'
WRITE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bank,
NOP
Col n
T2
T2
DI
x
T2n
T2n
DI
x'
512Mb: x4, x8, x16 DDR SDRAM
WRITE
WRITE
Bank,
Col n
Bank,
T3
Col a
T3
DI
n
DON’T CARE
DON’T CARE
T3n
DI
n'
©2000 Micron Technology, Inc. All rights reserved.
WRITE
T4
Bank,
NOP
DI
Col g
T4
n
DI
a
TRANSITIONING DATA
TRANSITIONING DATA
T4n
T4n
DI
a'
Operations
T5
T5
NOP
NOP
DI
g
T5n
T5n
DI
g'