MT45W8MW16BGX-701 WT TR Micron Technology Inc, MT45W8MW16BGX-701 WT TR Datasheet - Page 20

• Manufacturer Part Number: MT45W8MW16BGX-701 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-701 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 14:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
(except A[19:18])
A[19:18]
DQ[15:0]
LB#/UB#
A[22:0]
ADV#
WE#
OE#
CRE
CE#
Register READ, Asynchronous Mode Followed by READ ARRAY Operation
1
Notes:
1. A[19:18] = 00b to read RCR, 10b to read BCR, and 01b to read DIDR.
Select Register
t AVS
Initiate Register Access
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
t VP
t AVS
t AA
t LZ
t AAVD
t OLZ
t AA
t AVH
t AVH
t CO
t OE
t LZ
20
t BA
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Page/Burst CellularRAM 1.5 Memory
CR Valid
t HZ
t CPH
t OHZ
t BHZ
Address
Address
Don’t Care
©2004 Micron Technology, Inc. All rights reserved.
Data Valid
Undefined