MT45W8MW16BGX-701 WT TR Micron Technology Inc, MT45W8MW16BGX-701 WT TR Datasheet - Page 33

• Manufacturer Part Number: MT45W8MW16BGX-701 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-701 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 9:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
Parameter
Voltage to any ball except V
Voltage on V
Voltage on V
Storage temperature (plastic)
Operating temperature (case)
Soldering temperature and time
Wireless
Industrial
10s (solder ball only)
CC
CC
Absolute Maximum Ratings
Q supply relative to V
supply relative to V
Notes:
1. The 4.0V maximum V
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
CC
, V
specification.
CC
Q relative to V
SS
SS
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
SS
CC
Q voltage exceeds the 2.45V CellularRAM 1.5 Workgroup
33
–0.5V to (4.0V or V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Page/Burst CellularRAM 1.5 Memory
–55ºC to +150ºC
–0.2V to +2.45V
–0.2V to +4.0V
–30ºC to +85ºC
–40ºC to +85ºC
CC
Rating
+260ºC
Q + 0.3V, whichever is less)
©2004 Micron Technology, Inc. All rights reserved.
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