MT45W8MW16BGX-701 WT TR Micron Technology Inc, MT45W8MW16BGX-701 WT TR Datasheet - Page 6

• Manufacturer Part Number: MT45W8MW16BGX-701 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-701 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 2:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
ADV#
WAIT
WE#
OE#
UB#
CLK
CRE
CE#
LB#
Functional Block Diagram – 8 Meg x 16
A[22:0]
Notes:
Control
Logic
1. Functional block diagrams illustrate simplified device operation. See ball descriptions
(Table 1 on page 7), bus operations table (Table 2 on page 8), and timing diagrams for
detailed information.
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
Refresh Configuration
Device ID Register
Bus Configuration
Address Decode
Register (RCR)
Register (BCR)
(DIDR)
Logic
6
8,192K x 16
Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DRAM
Array
Page/Burst CellularRAM 1.5 Memory
Output
Buffers
Input/
MUX
and
©2004 Micron Technology, Inc. All rights reserved.
DQ[7:0]
DQ[15:8]