IS42S16400D-6T ISSI, Integrated Silicon Solution Inc, IS42S16400D-6T Datasheet - Page 12
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IS42S16400D-6T
Manufacturer Part Number
IS42S16400D-6T
Description
IC SDRAM 64MBIT 166MHZ 54TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS42S16400D-7TL.pdf
(57 pages)
Specifications of IS42S16400D-6T
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (4M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S16400D-6TL
Manufacturer:
ISSI
Quantity:
300
Company:
Part Number:
IS42S16400D-6TL
Manufacturer:
Hynix
Quantity:
333
IS42S16400D
DC RECOMMENDED OPERATING CONDITIONS
12
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
2. All voltages are referenced to GND.
3. V
4. V
V
Symbol
V
V
V
V
P
I
T
T
Symbol
C
C
CI/O
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
CS
Symbol
OPR
STG
DD
DD MAX
DDQ MAX
IN
OUT
D MAX
CLK
IH
IL
IN
(min) = GND - 2.0V with a pulse width < 3ns.
(max) = V
V
V
, V
IH
IL
DDQ
DDQ
Parameter
Input Capacitance: Address and Control
Input Capacitance: (CLK)
Data Input/Output Capacitance: I/O0-I/O15
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
+ 2.0V with a pulse width < 3ns.
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
(4)
(3)
(1)
Min.
(1,2)
-0.3
3.0
2.0
(At T
Com.
A
Ind.
Typ.
= 0 to +25°C, V
3.3
—
—
(2)
(
At T
V
–1.0 to V
–1.0 to V
Integrated Silicon Solution, Inc. — www.issi.com
DD
Max.
+0.8
A
3.6
–1.0 to +4.6
–1.0 to +4.6
–65 to +150
–40 to +85
+ 0.3
= 0 to +70°C)
0 to +70
Rating
DD
50
1
DDQ
DDQ
= V
+ 0.5
+ 0.5
Unit
DDQ
V
V
V
= 3.3 ± 0.3V, f = 1 MHz)
Unit
mA
°C
°C
W
Typ.
V
V
V
V
—
—
—
Max.
3.8
3.5
6.5
Unit
pF
pF
pF
11/21/07
Rev. E