IS42S16400D-6T ISSI, Integrated Silicon Solution Inc, IS42S16400D-6T Datasheet - Page 9
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IS42S16400D-6T
Manufacturer Part Number
IS42S16400D-6T
Description
IC SDRAM 64MBIT 166MHZ 54TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS42S16400D-7TL.pdf
(57 pages)
Specifications of IS42S16400D-6T
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (4M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S16400D-6TL
Manufacturer:
ISSI
Quantity:
300
Company:
Part Number:
IS42S16400D-6TL
Manufacturer:
Hynix
Quantity:
333
IS42S16400D
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
11/21/07
NOTE:
10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and READs
11. Does not affect the state of the bank and acts as a NOP to that bank.
1. This table applies when CKE n-1 was HIGH and CKE n is HIGH (see Truth Table - CKE) and after t
2. This table is bank-specific, except where noted; i.e., the current state is for a specific bank and the commands shown are those
3. Current state definitions:
4. The following states must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP commands, or
5. The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP commands must be
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle.
8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid state for precharging.
9. Not bank-specific; BURST TERMINATE affects the most recent READ or WRITE burst, regardless of bank.
previous state was SELF REFRESH).
allowed to be issued to that bank when in that state. Exceptions are covered in the notes below.
allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable commands to
the other bank are determined by its current state and CURRENT STATE BANK n truth tables.
applied on each positive clock edge during these states.
or WRITEs with auto precharge disabled.
Precharge Enabled: Starts with registration of a READ command with auto precharge enabled and ends when t
Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when t
Row Activating: Starts with registration of an ACTIVE command and ends when t
Accessing Mode
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when t
Read w/Auto
Precharging: Starts with registration of a PRECHARGE command and ends when t
Write w/Auto
Row Active: A row in the bank has been activated, and t
Refreshing: Starts with registration of an AUTO REFRESH command and ends when t
Register: Starts with registration of a LOAD MODE REGISTER command and ends when t
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated.
Idle: The bank has been precharged, and t
accesses are in progress.
will be in the idle state.
be in the row active state.
Once t
Once t
SDRAM will be in the all banks idle state.
t
banks will be in the idle state.
MRD
is met, the SDRAM will be in the all banks idle state.
RP
RP
is met, the bank will be in the idle state.
is met, the bank will be in the idle state.
RP
has been met.
RCD
has been met. No data bursts/accesses and no register
RCD
is met. Once t
RP
is met. Once t
RC
RP
is met. Once t
is met. Once t
XSR
MRD
has been met (if the
RCD
has been met. Once
RP
is met, the bank will
is met, the bank
RP
RP
RP
RC
has been met.
has been met.
is met, all
is met, the
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