MT46H8M32LFB5-6:A TR Micron Technology Inc, MT46H8M32LFB5-6:A TR Datasheet - Page 31
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MT46H8M32LFB5-6:A TR
Manufacturer Part Number
MT46H8M32LFB5-6:A TR
Description
IC DDR SDRAM 256MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H8M32LFB5-6:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (8Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1280-2
MT46H8M32LFB5-6:A TR
MT46H8M32LFB5-6:A TR
Figure 16:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Nonconsecutive READ Bursts
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4 or 8 (if burst is 8, the second burst interrupts the first).
3. Shown with nominal
4. Example applies when READ commands are issued to different devices or nonconsecutive
READs.
CL = 2
OUT
NOP
NOP
n (or b) = data-out from column n (or column b).
T1
T1
CL = 3
T1n
T1n
D
OUT
n
NOP
NOP
T2
T2
t
AC,
D
t
n+1
T2n
T2n
DQSCK, and
OUT
31
D
D
READ
READ
Bank,
Bank,
Col b
Col b
n+2
T3
OUT
T3
n
OUT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
256Mb: x16, x32 Mobile DDR SDRAM
DQSQ.
T3n
T3n
D
D
n+1
n+3
OUT
OUT
CL = 2
Transitioning data
D
T4
T4
n+2
NOP
NOP
OUT
CL = 3
T4n
T4n
D
n+3
OUT
T5
T5
NOP
NOP
©2005 Micron Technology, Inc. All rights reserved.
D
OUT
b
T5n
T5n
Don’t Care
D
b+1
OUT
Operations
T6
T6
NOP
NOP
D
D
b+2
OUT
OUT
b