MT48H16M16LFBF-75:G TR Micron Technology Inc, MT48H16M16LFBF-75:G TR Datasheet - Page 6

• Manufacturer Part Number: MT48H16M16LFBF-75:G TR
• Description: IC SDRAM 256MBIT 132MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-75:G TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1326-2

Functional Block Diagrams
Figure 2:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
A[12:0],
BA[1:0]
CAS#
RAS#
WE#
CKE
CLK
CS#
15
ADDRESS
REGISTER
16 Meg x 16 SDRAM
MODE REGISTER
EXT MODE
REGISTER
CONTROL
LOGIC
15
The 256Mb SDRAM is designed to operate in 1.8V low-power memory systems. An auto
refresh mode is provided, along with a power-saving deep power-down mode. All inputs
and outputs are LVTTL-compatible.
SDRAM offers substantial advances in DRAM operating performance, including the abil-
ity to synchronously burst data at a high data rate with automatic column-address gen-
eration, the ability to interleave between internal banks in order to hide precharge time,
and the capability to randomly change column addresses on each clock cycle during a
burst access.
COUNTER
REFRESH
13
9
2
13
ADDRESS
2
ROW-
MUX
COUNTER/
CONTROL
COLUMN-
ADDRESS
LATCH
LOGIC
BANK
13
DECODER
ADDRESS
BANK0
LATCH
ROW-
&
9
8192
6
READ DATA LATCH
DQM MASK LOGIC
(8192 x 512 x 16)
Sense amplifiers
WRITE DRIVERS
I/O GATING
DECODER
COLUMN
MEMORY
BANK0
ARRAY
(x16)
8192
256
Bank1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bank2
Bank3
256Mb: x16, x32 Mobile SDRAM
BA1
0
0
1
1
Functional Block Diagrams
16
16
2
BA0
0
1
0
1
REGISTER
REGISTER
OUTPUT
INPUT
DATA
DATA
©2006 Micron Technology, Inc. All rights reserved.
Bank
0
1
2
3
2
16
UDQM,
LDQM
DQ[15:0]