MT48H16M16LFBF-75:G TR Micron Technology Inc, MT48H16M16LFBF-75:G TR Datasheet - Page 71

• Manufacturer Part Number: MT48H16M16LFBF-75:G TR
• Description: IC SDRAM 256MBIT 132MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-75:G TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1326-2

Figure 51:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
DQML, DQMH
Command
Addresss
BA[1:0]
DQM/
CKE
A10
CLK
DQ
t CMS
t CKS
WRITE – Continuous Page Burst
t AS
t AS
t AS
ACTIVE
BANK
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
Notes: 1. x16: A11 and A12 = “Don’t Care”; x8: A12 = “Don’t Care.”
t RCD
t CL
2.
3. Page left open; no
T1
NOP
t
t CH
WR must be satisfied prior to PRECHARGE command.
t CMS
t CK
COLUMN
t DS
D
WRITE
T2
BANK
IN
t CMH
t DH
m
m
1
t
RP.
t DS
D
IN
T3
NOP
m + 1
t DH
71
1024 (x16) locations within same row
t DS
D
IN
T4
NOP
m + 2
Continuous page completed
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t DS
256Mb: x16, x32 Mobile SDRAM
D
IN
T5
NOP
m + 3
t DH
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t DS
D
Tn + 1
IN
NOP
m - 1
t DH
©2006 Micron Technology, Inc. All rights reserved.
Continuous-page burst does
not self-terminate.
Can use BURST TERMINATE
command to stop.
Timing Diagrams
BURST TERM
Tn + 2
2, 3
Don’t Care
Tn + 3
NOP