CY7C138-25JC Cypress Semiconductor Corp, CY7C138-25JC Datasheet - Page 8

IC SRAM 32KBIT 25NS 68PLCC

CY7C138-25JC

Manufacturer Part Number
CY7C138-25JC
Description
IC SRAM 32KBIT 25NS 68PLCC
Manufacturer
Cypress Semiconductor Corp
Datasheets

Specifications of CY7C138-25JC

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
32K (4K x 8)
Speed
25ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
68-PLCC
Density
32Kb
Access Time (max)
25ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
12b
Package Type
PLCC
Operating Temp Range
0C to 70C
Number Of Ports
2
Supply Current
180mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
68
Word Size
8b
Number Of Words
4K
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1445

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C138-25JC
Manufacturer:
CYPRESS
Quantity:
13 888
Part Number:
CY7C138-25JC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Notes
Document #: 38-06037 Rev. *E
20. BUSY = HIGH for the writing port.
21. CE
22. The internal write time of the memory is defined by the overlap of CE or SEM LOW and R/W LOW. Both signals must be LOW to initiate a write, and either signal can
23. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of t
24. R/W must be HIGH during all address transitions.
SEM OR CE
SEM OR CE
terminate a write by going HIGH. The data input setup and hold timing should be referenced to the rising edge of the signal that terminates the write.
placed on the bus for the required t
be as short as the specified t
DATA OUT
ADDRESS
DATA OUT
ADDRESS
L
DATA IN
DATA IN
= CE
R/W
R/W
OE
R
= LOW.
Figure 7. Write Cycle No. 2: R/W Three-States Data I/Os (Either Port)
Figure 6. Write Cycle No. 1: OE Three-States Data I/Os (Either Port)
PWE
.
SD
. If OE is HIGH during a R/W controlled write cycle (as in this example), this requirement does not apply and the write pulse can
(continued)
t
SA
t
t
HZOE
SA
t
SCE
t
SCE
t
AW
t
HIGH IMPEDANCE
AW
t
HZWE
t
WC
t
WC
t
PWE
t
PWE
PWE
t
SD
DATA VALID
t
SD
or (t
HIGH IMPEDANCE
DATA VALID
HZWE
+ t
SD
) to allow the I/O drivers to turn off and data to be
t
HD
t
t
HD
LZWE
t
HA
[22, 23, 24]
t
LZOE
[22, 24, 25]
t
CY7C138, CY7C139
HA
Page 8 of 17
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