M29F200BB70N6T NUMONYX, M29F200BB70N6T Datasheet - Page 16

• Manufacturer Part Number: M29F200BB70N6T
• Description: IC FLASH 2MBIT 70NS 48TSOP
• Manufacturer: NUMONYX

Specifications of M29F200BB70N6T

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 2M (256K x 8 or 128K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-1707-2

Command interface
4
4.0.1
4.0.2
4.0.3
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Command interface
All Bus Write operations to the memory are interpreted by the Command Interface.
Commands consist of one or more sequential Bus Write operations. Failure to observe a
valid sequence of Bus Write operations will result in the memory returning to Read mode.
The long command sequences are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16-
bit or 8-bit mode. See either
used, for a summary of the commands.
Read/Reset command
The Read/Reset command returns the memory to its Read mode where it behaves like a
ROM or EPROM. It also resets the errors in the Status Register. Either one or three Bus
Write operations can be used to issue the Read/Reset command.
If the Read/Reset command is issued during a Block Erase operation or following a
Programming or Erase error then the memory will take up to 10
period no valid data can be read from the memory. Issuing a Read/Reset command during a
Block Erase operation will leave invalid data in the memory.
Auto Select command
The Auto Select command is used to read the Manufacturer Code, the Device Code and the
Block Protection Status. Three consecutive Bus Write operations are required to issue the
Auto Select command. Once the Auto Select command is issued the memory remains in
Auto Select mode until another command is issued.
From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation
with A0 = V
Manufacturer Code for STMicroelectronics is 0020h.
The Device Code can be read using a Bus Read operation with A0 = V
other address bits may be set to either V
00D3h and for the M29F200BB is 00D4h.
The Block Protection Status of each block can be read using a Bus Read operation with A0
= V
may be set to either V
Data Inputs/Outputs DQ0-DQ7, otherwise 00h is output.
Program command
The Program command can be used to program a value to one address in the memory array
at a time. The command requires four Bus Write operations, the final write operation latches
the address and data in the internal state machine and starts the Program/Erase Controller.
If the address falls in a protected block then the Program command is ignored, the data
remains unchanged. The Status Register is never read and no error condition is given.
During the program operation the memory will ignore all commands. It is not possible to
issue any command to abort or pause the operation. Typical program times are given in
Table
on the Data Inputs/Outputs. See the section on the Status Register for more details.
IL
, A1 = V
6. Bus Read operations during the program operation will output the Status Register
IL
IH
and A1 = V
, and A12-A16 specifying the address of the block. The other address bits
IL
or V
IL
. The other address bits may be set to either V
Table
IH
. If the addressed block is protected then 01h is output on
4, or
Table
IL
or V
5, depending on the configuration that is being
IH
. The Device Code for the M29F200BT is
µs
M29F200BT, M29F200BB
to abort. During the abort
IH
IL
and A1 = V
or V
IH
. The
IL
. The