M29F200BB70N6T NUMONYX, M29F200BB70N6T Datasheet - Page 21
![IC FLASH 2MBIT 70NS 48TSOP](/photos/7/30/73029/m29f200bb70n6t_sml.jpg)
M29F200BB70N6T
Manufacturer Part Number
M29F200BB70N6T
Description
IC FLASH 2MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Datasheet
1.M29F200BB70N6T.pdf
(39 pages)
Specifications of M29F200BB70N6T
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
2M (256K x 8 or 128K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1707-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29F200BB70N6T
Manufacturer:
ST
Quantity:
5 530
Company:
Part Number:
M29F200BB70N6T
Manufacturer:
ST
Quantity:
5 530
Company:
Part Number:
M29F200BB70N6T
Manufacturer:
ST
Quantity:
5 530
M29F200BT, M29F200BB
Table 6.
1. T
Chip Erase (All bits in the memory set to ‘0’)
Chip Erase
Block Erase (64 Kbytes)
Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
A
= 25°C, V
Program, Erase times and Program, Erase endurance cycles
(T
CC
A
= 5V.
Parameter
= 0 to 70°C, –40 to 85°C or –40 to 125°C)
100,000
Min
Typ
0.8
2.5
0.6
2.3
1.2
8
(1)
100k W/E Cycles
Typical after
0.8
2.5
0.6
2.3
1.2
8
(1)
Command interface
Max
150
4.5
10
4
9
cycles
Unit
µs
s
s
s
s
s
21/39