M25P10-AVMN6T STMicroelectronics, M25P10-AVMN6T Datasheet - Page 17

IC FLASH 1MBIT 40MHZ 8SOIC

M25P10-AVMN6T

Manufacturer Part Number
M25P10-AVMN6T
Description
IC FLASH 1MBIT 40MHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of M25P10-AVMN6T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
1M (128K x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1622-2

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M25P10-A
6.1
Table 4.
1. The Read Identification (RDID) instruction is available in products with process technology code X and Y
Write Enable (WREN)
The Write Enable (WREN) instruction
The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector
Erase (SE), Bulk Erase (BE) and Write Status Register (WRSR) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
Figure 7.
FAST_READ
Instruction
(see application note AN1995).
RDID
WREN
WRSR
RDSR
READ
WRDI
RES
DP
PP
SE
BE
(1)
Instruction set
Write Enable (WREN) instruction sequence
Write Enable
Write Disable
Read Identification
Read Status Register
Write Status Register
Read Data Bytes
Read Data Bytes at Higher
Speed
Page Program
Sector Erase
Bulk Erase
Deep Power-down
Release from Deep Power-
down, and Read Electronic
Signature
Release from Deep Power-
down
S
C
D
Q
Description
High Impedance
0
(Figure
1
One-byte instruction
2
Instruction
0000 0110
0000 0100
1001 1111
0000 0101
0000 0001
0000 0011
0000 1011
0000 0010
1101 1000
1100 0111
1011 1001
1010 1011
3
7) sets the Write Enable Latch (WEL) bit.
4
code
5
6
7
0Bh
D8h
C7h
B9h
ABh
06h
04h
9Fh
05h
01h
03h
02h
Address
AI02281E
bytes
0
0
0
0
0
3
3
3
0
0
0
0
3
Dummy
bytes
0
0
0
0
0
0
1
0
0
0
0
3
0
Instructions
1 to 256
1 to ∞
1 to ∞
1 to ∞
1 to ∞
bytes
1 to 3
Data
0
0
1
0
0
0
0
17/51

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