M25P10-AVMN6T STMicroelectronics, M25P10-AVMN6T Datasheet - Page 40

IC FLASH 1MBIT 40MHZ 8SOIC

M25P10-AVMN6T

Manufacturer Part Number
M25P10-AVMN6T
Description
IC FLASH 1MBIT 40MHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of M25P10-AVMN6T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
1M (128K x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1622-2

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DC and AC parameters
40/51
Table 18.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
5. It is 30 µs in devices produced with the ‘X’ and ‘Y’ process technology (grade 3 devices are only produced
Symbol
t
t
t
t
t
t
t
t
t
HHQX
WHSL
SHWL
CLCH
CHCL
SHQZ
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CHHH
HHCH
DVCH
CHDX
CHSH
SHCH
CH
SLCH
CHSL
SHSL
CLQV
CLQX
HLCH
CHHL
DP
CL
using the ‘X’ process technology). Details of how to find the process letter on the device marking are given
in the application note AN1995.
f
f
CH
C
R
(1)
(2)
(1)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(4)
(4)
+ t
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
t
t
CLH
CSS
DSU
CSH
t
CLL
t
DIS
f
DH
HO
t
HZ
LZ
AC characteristics (25 MHz operation, device grade 6 or 3)
C
V
Clock frequency for the following
instructions: FAST_READ, PP, SE, BE, DP,
RES, WREN, WRDI, RDSR, WRSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock Rise time
Clock Fall time
S Active Setup time (relative to C)
S Not Active Hold time (relative to C)
Data In Setup time
Data In Hold time
S Active Hold time (relative to C)
S Not Active Setup time (relative to C)
S Deselect time
Output Disable time
Clock Low to Output Valid
Output Hold time
HOLD Setup time (relative to C)
HOLD Hold time (relative to C)
HOLD Setup time (relative to C)
HOLD Hold time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup time
Write Protect Hold time
S High to Deep Power-down mode
S High to Standby mode without Read
Electronic Signature
S High to Standby mode with Read
Electronic Signature
Test conditions specified in
(3)
(3)
Parameter
(peak to peak)
(peak to peak)
C
.
Table 10
and
D.C.
D.C.
Min
100
100
0.1
0.1
10
10
20
18
18
10
10
10
10
10
10
Table 12
5
5
0
Typ
1.8 or 30
3 or 30
Max
25
20
15
15
15
20
3
M25P10-A
(5)
(5)
MHz
MHz
V/ns
V/ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs

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