CY7C1361B-100BGC Cypress Semiconductor Corp, CY7C1361B-100BGC Datasheet - Page 24

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CY7C1361B-100BGC

Manufacturer Part Number
CY7C1361B-100BGC
Description
IC SRAM 9MBIT 100MHZ 119BGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1361B-100BGC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
100MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
119-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1361B-100BGC
Manufacturer:
MIT
Quantity:
6
Part Number:
CY7C1361B-100BGC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05302 Rev. *B
AC Test Loads and Waveforms
Note:
Thermal Resistance
Capacitance
14. Tested initially and after any design or process change that may affect these parameters.
C
C
C
OUTPUT
OUTPUT
IN
CLK
I/O
Parameter
Parameter
3.3V I/O Test Load
2.5V I/O Test Load
Θ
Θ
JC
JA
Z
Z
[14]
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
0
0
= 50Ω
= 50Ω
Input Capacitance
Clock Input Capacitance
Input/Output Capacitance
Description
(a)
(a)
V
V
[14]
L
Description
L
= 1.25V
= 1.5V
R
R
L
L
= 50Ω
= 50Ω
OUTPUT
OUTPUT
3.3V
2.5V
Test conditions follow standard
test methods and procedures
for measuring thermal
impedance, per EIA / JESD51.
INCLUDING
INCLUDING
JIG AND
T
V
V
JIG AND
SCOPE
SCOPE
A
DD
DDQ
Test Conditions
5 pF
5 pF
= 25°C, f = 1 MHz,
= 3.3V.
Test Conditions
= 2.5V
(b)
(b)
R = 317Ω
R = 1667Ω
R = 351Ω
R =1538Ω
V
Package
Package
GND
GND
DD
TQFP
V
TQFP
25
DD
9
≤ 1ns
≤ 1ns
5
5
5
10%
10%
Package
Package
ALL INPUT PULSES
ALL INPUT PULSES
BGA
BGA
25
5
5
7
6
90%
90%
(c)
(c)
Package
Package
fBGA
CY7C1361B
CY7C1363B
fBGA
5
5
7
27
6
Page 24 of 34
90%
90%
10%
10%
°C/W
°C/W
≤ 1ns
≤ 1ns
Unit
Unit
pF
pF
pF

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