CY7C1361B-100BGC Cypress Semiconductor Corp, CY7C1361B-100BGC Datasheet - Page 26

• Manufacturer Part Number: CY7C1361B-100BGC
• Description: IC SRAM 9MBIT 100MHZ 119BGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1361B-100BGC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document #: 38-05302 Rev. *B
Timing Diagrams
Read Cycle Timing
Note:
21. On this diagram, when CE is LOW: CE
GW, BWE,BW
Data Out (Q)
ADDRESS
CLK
ADSP
ADSC
ADV
OE
X
CE
High-Z
[21]
t ADS
t AS
t CES
A1
t ADH
t CLZ
t AH
t CEH
t
t OEV
CH
t CDV
t CYC
Single READ
t
t CL
WES
1
Q(A1)
is LOW, CE
t
WEH
t OEHZ
t ADS
A2
2
t ADH
is HIGH and CE
t OELZ
t
ADVS
Q(A2)
t
t DOH
ADVH
t CDV
3
is LOW. When CE is HIGH: CE
Q(A2 + 1)
DON’T CARE
Q(A2 + 2)
ADV suspends burst
UNDEFINED
BURST
READ
1
is HIGH or CE
Q(A2 + 3)
2
is LOW or CE
Q(A2)
Burst wraps around
to its initial state
CY7C1361B
CY7C1363B
3
Q(A2 + 1)
is HIGH.
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Deselect Cycle
Q(A2 + 2)
t CHZ