JS28F320C3TD70 NUMONYX, JS28F320C3TD70 Datasheet - Page 61
![IC FLASH 32MBIT 70NS 48TSOP](/photos/7/30/73048/js28f320c3td70_sml.jpg)
JS28F320C3TD70
Manufacturer Part Number
JS28F320C3TD70
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Datasheet
1.JS28F320C3BD70A.pdf
(68 pages)
Specifications of JS28F320C3TD70
Format - Memory
FLASH
Memory Type
Advanced + Boot Block FLASH
Memory Size
32M (2M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
864838
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
JS28F320C3TD70
Manufacturer:
INTEL
Quantity:
5 530
Company:
Part Number:
JS28F320C3TD70
Manufacturer:
INTEL
Quantity:
6 250
Company:
Part Number:
JS28F320C3TD70
Manufacturer:
MAX
Quantity:
2 399
Numonyx™ Embedded Flash Memory (J3 v. D)
13.5
Table 37: System Interface Information
13.6
Table 38: Device Geometry Definition
November 2007
308551-05
Offset
Offset
1Dh
1Bh
1Ch
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
2Ah
2Ch
2Dh
27h
28h
Length
Length
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
1
4
System Interface Information
The following device information can optimize system interface software.
Device Geometry Definition
This field provides critical details of the flash device geometry.
V
V
V
V
“n” such that typical single word program time-out = 2
“n” such that typical max. buffer write time-out = 2
“n” such that typical block erase time-out = 2
“n” such that typical full chip erase time-out = 2
“n” such that maximum word program time-out = 2
“n” such that maximum buffer write time-out = 2
“n” such that maximum block erase time-out = 2
“n” such that maximum chip erase time-out = 2
“n” such that device size = 2
Flash device interface:
“n” such that maximum number of bytes in write buffer = 2
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or more
contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
Erase Block Region 1 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
CC
CC
PP
PP
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
[programming] supply minimum program/erase voltage
[programming] supply maximum program/erase voltage
logic supply minimum program/erase voltage
logic supply maximum program/erase voltage
x8 async
28:00,29:00 28:01,29:00 28:02,29:00
Description
n
in number of bytes
Description
x16 async x8/x16 async
n
ms
n
n
n
n
times typical
ms
times typical
times typical
n
n
µs
times typical
n
µs
n
Add.
1B:
1C:
1D:
1E:
1F:
20:
21:
22:
23:
24:
25:
26:
Code See Table Below
27:
28:
2A:
2B:
2C:
2D:
30:
29:
2E:
2F:
Code
Hex
--27
--36
--00
--00
--06
--07
--0A
--00
--02
--03
--02
--00
--02
--05
--00
--01
--00
Datasheet
1024 µs
128 µs
256 µs
Value
2.7 V
3.6 V
0.0 V
0.0 V
64 µs
1 s
4 s
NA
NA
x16
x8/
32
1
61