CY62167DV30LL-45ZXIT Cypress Semiconductor Corp, CY62167DV30LL-45ZXIT Datasheet - Page 4

• Manufacturer Part Number: CY62167DV30LL-45ZXIT
• Description: IC SRAM 16MBIT 45NS 48TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62167DV30LL-45ZXIT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 16M (1M x 16)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP I
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05328 Rev. *G
Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
Notes:
10. Tested initially and after any design or process changes that may affect these parameters.
12. Test condition for the 45 ns part is with a load capacitance of 30 pF.
13. Full device operation requires linear V
11. This applies for all packages.
C
C
Θ
Θ
V
I
t
t
Parameter
Parameter
Parameter
CCDR
CDR
R
DR
IN
OUT
JA
JC
[13]
[10]
OUTPUT
Parameters
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
CC
INCLUDING
[10, 11]
V
R
V
R1
R2
for Data Retention
CC
TH
TH
JIG AND
SCOPE
50 pF
Description
Description
[12]
[10]
Description
CC
R1
ramp from V
Equivalent to:
R2
[12]
(Over the Operating Range)
DR
T
Still Air, soldered on a 3 × 4.5 inch,
2-layer printed circuit board
A
16667
15385
to V
OUTPUT
8000
2.5V
1.20
= 25°C, f = 1 MHz, V
CC(min.)
Rise Time = 1 V/ns
> 100 µs or stable at V
Test Conditions
Test Conditions
THE VENIN EQUIVALENT
GND
V
V
CE
V
CC
CC
IN
1
= 1.5V
> V
> V
CC
10%
CC
CC
R
= V
TH
– 0.2V, CE
– 0.2V or V
1103
1554
3.0V
1.75
645
Conditions
CC(typ)
CC(min.)
ALL INPUT PULSES
90%
V
> 100 µs.
2
IN
< 0.2V,
< 0.2V
CY62167DV30 MoBL
VFBGA
55
16
Max.
90%
10
8
10%
Min. Typ.
Fall Time = 1 V/ns
t
1.5
RC
0
TSOP I
Unit
4.3
Ω
Ω
Ω
V
60
[2]
Page 4 of 12
Max.
10
Unit
pF
pF
°C/W
°C/W
Unit
Unit
µA
ns
ns
V
®