CY7C1480V33-167BZI Cypress Semiconductor Corp, CY7C1480V33-167BZI Datasheet - Page 10

IC SRAM 72MBIT 167MHZ 165LFBGA

CY7C1480V33-167BZI

Manufacturer Part Number
CY7C1480V33-167BZI
Description
IC SRAM 72MBIT 167MHZ 165LFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1480V33-167BZI

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
72M (2M x 36)
Speed
167MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1480V33-167BZI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05283 Rev. *G
Truth Table
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Sleep Mode, Power Down
READ Cycle, Begin Burst
READ Cycle, Begin Burst
WRITE Cycle, Begin Burst
READ Cycle, Begin Burst
READ Cycle, Begin Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
WRITE Cycle, Continue Burst
WRITE Cycle, Continue Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
WRITE Cycle,Suspend Burst
WRITE Cycle,Suspend Burst
Notes:
2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
3. WRITE = L when any one or more Byte Write enable signals and BWE = L or GW = L. WRITE = H when all Byte write enable signals, BWE, GW = H.
4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
5. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW
6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are Tri-State when OE is
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a
don't care for the remainder of the write cycle.
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Operation
[2, 3, 4, 5, 6]
Add. Used
External
External
External
External
External
Current
Current
Current
Current
Current
Current
None
None
None
None
None
None
Next
Next
Next
Next
Next
Next
CE
H
H
H
H
H
H
X
X
X
X
H
X
X
X
L
L
L
L
L
L
L
L
L
1
CE
X
X
X
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
L
L
2
CE
X
X
H
X
H
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
3
ZZ ADSP
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
H
H
X
H
H
H
H
H
X
X
H
X
H
H
X
X
H
X
L
L
L
L
ADSC
H
H
H
H
H
H
H
H
H
H
X
X
X
X
X
H
H
L
L
L
L
L
L
X
. Writes may occur only on subsequent clocks
ADV WRITE OE CLK
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
L
L
L
L
L
L
H
H
H
H
H
H
H
H
X
X
X
X
X
X
X
X
H
H
L
L
L
L
L
CY7C1480V33
CY7C1482V33
CY7C1486V33
H
H
H
H
X
X
X
X
X
X
H
X
H
X
X
X
X
L
L
L
L
L
L
L-H Tri-State
L-H Tri-State
L-H Tri-State
L-H Tri-State
L-H Tri-State
L-H
L-H Tri-State
L-H
L-H
L-H Tri-State
L-H
L-H Tri-State
L-H
L-H Tri-State
L-H
L-H
L-H
L-H Tri-State
L-H
L-H Tri-State
L-H
L-H
Page 10 of 31
X
Tri-State
DQ
Q
Q
Q
Q
Q
Q
D
D
D
D
D
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