CY7C1480V33-167BZI Cypress Semiconductor Corp, CY7C1480V33-167BZI Datasheet - Page 19

• Manufacturer Part Number: CY7C1480V33-167BZI
• Description: IC SRAM 72MBIT 167MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1480V33-167BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document #: 38-05283 Rev. *G
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
Electrical Characteristics
V
V
V
V
V
V
I
I
I
I
I
I
I
Notes:
12. Overshoot: V
13. Power-up: Assumes a linear ramp from 0V to V
Parameter
X
OZ
DD
SB1
SB2
SB3
SB4
DD
DDQ
OH
OL
IH
IL
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
except ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
V
Current
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—TTL Inputs
IH
DD
(AC) < V
Operating Supply
Description
DD
DDQ
DD
Relative to GND........ –0.3V to +4.6V
+1.5V (Pulse width less than t
Relative to GND ...... –0.3V to +V
[12]
[12]
Over the Operating Range
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O, I
for 2.5V I/O, I
for 3.3V I/O, I
for 2.5V I/O, I
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O
for 2.5V I/O
GND ≤ V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
f = 0
V
V
f = f
V
V
DD
DD
IN
DD
IN
DD
IN
DD
IN
DD
(min.) within 200 ms. During this time V
MAX
≥ V
MAX
≤ 0.3V or V
≤ 0.3V or V
MAX
≥ V
= Max, Device Deselected, or
= Max., I
= Max, Device Deselected,
= Max, Device Deselected,
= Max, Device Deselected,
IH
IH
= 1/t
= 1/t
= 1/t
CYC
I
SS
DD
SS
DD
I
or V
or V
≤ V
≤ V
DDQ
/2), undershoot: V
CYC
CYC
CYC
OUT
OH
OH
OL
OL
DDQ
DDQ,
IN
IN
+ 0.5V
IN
IN
= 8.0 mA
= 1.0 mA
≤ V
≤ V
= –4.0 mA
= –1.0 mA
= 0 mA,
> V
> V
Output Disabled
DD
IL
IL
Test Conditions
DDQ
DDQ
, f = 0
[12, 13]
– 0.3V,
– 0.3V
IL
DC Input Voltage ................................... –0.5V to V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015Latch-up Current. >200 mA
Operating Range
(AC) > –2V (Pulse width less than t
Commercial
Industrial
Range
IH
All speeds
All speeds
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
< V
DD
–40°C to +85°C
and V
Temperature
0°C to +70°C
Ambient
DDQ
< V
DD.
CYC
/2).
3.3V –5%/+10% 2.5V – 5%
3.135
3.135
2.375
Min.
–0.3
–0.3
–30
2.4
2.0
2.0
1.7
–5
–5
–5
CY7C1480V33
CY7C1482V33
CY7C1486V33
V
DD
V
V
DD
DD
2.625
Max.
Page 19 of 31
V
500
500
450
245
245
245
245
245
245
120
135
3.6
0.4
0.4
0.8
0.7
30
+ 0.3V
+ 0.3V
5
5
5
DD
DD
to V
V
DDQ
+ 0.5V
DD
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
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