W19B320BTT7H Winbond Electronics, W19B320BTT7H Datasheet - Page 16

• Manufacturer Part Number: W19B320BTT7H
• Description: IC FLASH 32MBIT 70NS 48TSOP
• Manufacturer: Winbond Electronics

Specifications of W19B320BTT7H

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: W19B320BTT-H; W19B320BTT-H

6.2.6
Chip erase is a six-bus cycle operation. Writing two unlock cycles initiate the chip erase command
sequence, which is followed by a set-up command. After chip erase command, two additional unlock
write cycles are then followed, which in turn invokes the Embedded Erase algorithm. The system
preprogram is not required prior to erase. Before electrical erase, the Embedded Erase algorithm
automatically preprograms and verifies the entire memory for an all zero data pattern. Any controls or
timings during these operations is not required in system.
As the Embedded Erase algorithm is complete, the bank returns to the read mode and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6,
DQ2, or RY/#BY. Please refer to the Write Operation Status section for information on these status
bits.
Any commands written during the chip erase operation will be ignored. However, a hardware reset
shall terminate the erase operation immediately. If this happens, to ensure data integrity, the chip
erase command sequence should be reinitiated when that bank has returned to reading array data.
6.2.7
Sector erase is a six-bus cycle operation. Writing two unlock cycles initiate the sector erase command
sequence, which is followed by a set-up command. Two additional unlock cycles are written, and are
then followed by the address of the sector to be erased, and the sector erase command.
The device does not require the system to preprogram before erase. Before electrical erase, the
Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data
pattern. Any controls or timings during these operations are not required in system.
A sector erase time-out of 50 μs occurs after the command sequence is written. Additional sector
addresses and sector erase commands may be written during the time-out period. Loading the sector
erase buffer may be done in any sequence, and the number of sectors may be from one sector to all
sectors. The time between these additional cycles must be less than 50 μs; otherwise, erasure may
begin. Any sector erase address and command following the exceeded time-out may or may not be
accepted. To ensure all commands are accepted, processor interrupts be disabled during this time is
recommended. The interrupts can be re-enabled after the last Sector Erase command is written. Any
command other than Sector Erase or Erase Suspend during the time-out period resets the bank to the
read mode. The system must rewrite the command sequence and any additional addresses and
commands.
The system can monitor DQ3 to determine whether or not the sector erase timer has timed out (See
the section on DQ3: Sector Erase Timer.). The time-out begins from the rising edge of the final #WE
pulse in the command sequence.
As the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses
are no longer latched. Please note that when the Embedded Erase operation is in progress, the
system can read data from the non-erasing bank at the same time. By reading DQ7, DQ6, DQ2, or
RY/#BY in the erasing bank, the system can determine the status of the erase operation. Please refer
to the Write Operation Status section for information on these status bits.
When the sector erase operation begins, only the Erase Suspend command is valid. All other
commands are ignored. However, a hardware reset shall terminate the erase operation immediately. If
Chip Erase Command Sequence
Sector Erase Command Sequence
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W19B320BT/B DATASHEET
Publication Release Date:Dec.25, 2007
Revisionv A3