NAND512R3A2CZA6E NUMONYX, NAND512R3A2CZA6E Datasheet - Page 43
![IC FLASH 512MBIT 63VFBGA](/photos/7/31/73111/nand512r3a2cza6e_sml.jpg)
NAND512R3A2CZA6E
Manufacturer Part Number
NAND512R3A2CZA6E
Description
IC FLASH 512MBIT 63VFBGA
Manufacturer
NUMONYX
Datasheet
1.NAND512R3A2CZA6E.pdf
(55 pages)
Specifications of NAND512R3A2CZA6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
512M (64M x 8)
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND512R3A2CZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
NAND512-A2C
Figure 27. Read C operation, one page AC waveforms
1. A0-A7 is the address in the spare memory area, where A0-A3 are valid and A4-A7 are don’t care.
RB
CL
I/O
AL
W
R
E
Command
Code
50h
Add. M
cycle 1
Address M Input
Add. M
cycle 2
Add. M
cycle 3
tWHALL
Add. M
cycle 4
Busy
tBHRL
tWHBH
Last Byte or Word in Area C
Data Output from M to
Data M
tALLRL2
DC and AC parameters
Data
Last
ai08035b
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