NAND512R3A2CZA6E NUMONYX, NAND512R3A2CZA6E Datasheet - Page 45
![IC FLASH 512MBIT 63VFBGA](/photos/7/31/73111/nand512r3a2cza6e_sml.jpg)
NAND512R3A2CZA6E
Manufacturer Part Number
NAND512R3A2CZA6E
Description
IC FLASH 512MBIT 63VFBGA
Manufacturer
NUMONYX
Datasheet
1.NAND512R3A2CZA6E.pdf
(55 pages)
Specifications of NAND512R3A2CZA6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
512M (64M x 8)
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND512R3A2CZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
NAND512-A2C
Figure 29. Block erase AC waveforms
Figure 30. Reset AC waveforms
RB
I/O
W
AL
CL
R
I/O
RB
R
CL
AL
W
E
Setup Command
Block Erase
60h
FFh
(Write Cycle time)
cycle 1
tWLWL
Add.
Block Address Input
cycle 2
Add.
tWHBL
cycle 3
Add.
(Reset Busy time)
tBLBH4
Confirm
Code
D0h
Block Erase
(Erase Busy time)
tBLBH3
70h
Read Status Register
DC and AC parameters
SR0
ai08043
ai08038b
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