TH58100FT Toshiba, TH58100FT Datasheet - Page 31

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TH58100FT

Manufacturer Part Number
TH58100FT
Description
IC FLASH 1GBIT 50NS 48TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TH58100FT

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Speed
50ns
Interface
Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Internal erase
Internal V
Reset
generated voltage is discharged to 0 volts and the device enters Wait state.
The Reset mode stops all operations. For example, in the case of a Program or Erase operation the internally
The response to an “FFH” Reset command input during the various device operations is as follows:
When a Reset (FFH) command is input during programming
When a Reset (FFH) command is input during erasing
voltage
When a Reset (FFH) command is input during Read operation
When a Status Read command (70H) is input after a Reset
When two or more Reset commands are input in succession
RY
RY
RY
RY
RY
RY
/
/
/
/
/
/
BY
BY
BY
BY
BY
BY
PP
80
00
FF
FF
The second
D0
10
70
FF
command is invalid, but the third
(1)
FF
70
t
FF
FF
FF
RST
t
(max 6 µs)
RST
(max 10 µs)
t
RST
(max 500 µs)
FF
(2)
FF
I/O status: Pass/Fail → Pass
I/O status: Ready/Busy → Busy
command is valid.
Ready/Busy → Ready
2001-03-05 31/43
TH58100FT
00
Figure 10.
Figure 12.
Figure 11.
00
00
Figure 8.
Figure 9.
(3)
FF

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