TH58100FT Toshiba, TH58100FT Datasheet - Page 5

• Manufacturer Part Number: TH58100FT
• Description: IC FLASH 1GBIT 50NS 48TSOP
• Manufacturer: Toshiba

Specifications of TH58100FT

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

PROGRAMMING AND ERASING CHARACTERISTICS
RY
Note: (1) CE High to Ready time depends on the pull-up resistor tied to the
t
t
t
N
t
(1): Refer to Application Note (12) toward the end of this document.
PROG
DBSY
MBPBSY
BERASE
/
SYMBOL
RE
CE
BY
(2) Sequential Read is terminated when t
(Refer to Application Note (9) toward the end of this document.)
is less than 30 ns,
Programming Time
Dummy Busy Time for Multi Block
Programming
Multi Block Program Busy Time
Number of Programming Cycles on Same
Page
Block Erasing Time
525
PARAMETER
RY
526
/
BY
signal stays Ready.
527
CEH
is greater than or equal to 100 ns. If the RE to CE delay
A
MIN





t
CEH
Busy
≥ 100 ns
t
CRY
TYP.
200
200

(Ta = = = = 0° to 70°C, V
2
2
A
: 0 to 30 ns → Busy signal is not output.
RY
1000
1000
MAX
10
10
*
3
/
BY
pin.
2001-03-05 5/43
*: V
CC
UNIT
ms
µs
µs
µs
IH
= = = = 2.7 V to 3.6 V)
TH58100FT
or V
IL
NOTES
(1)