TE28F160C3TC90 Intel, TE28F160C3TC90 Datasheet - Page 47
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TE28F160C3TC90
Manufacturer Part Number
TE28F160C3TC90
Description
IC FLASH 16MBIT 90NS 48TSOP
Manufacturer
Intel
Specifications of TE28F160C3TC90
Rohs Status
RoHS non-compliant
Format - Memory
FLASH
Memory Type
Advanced + Boot Block FLASH
Memory Size
16M (1M x 16)
Speed
90ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Other names
845207
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TE28F160C3TC90
Manufacturer:
INTEL
Quantity:
20 000
8.3
Datasheet
Figure 9. Write Operations Waveform
Table 21. Erase and Program Timings
Erase and Program Timings
Address [A]
t
t
t
t
t
t
t
NOTES:
Data [D/Q]
BWPB
BWMB
WHQV1
WHQV2
WHQV3
WHRH1
WHRH2
1. Typical values measured at T
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
WE# [W]
OE# [G]
CE# [E]
RP# [P]
Vpp [V]
Symbol
/ t
/ t
/ t
/ t
/ t
EHQV1
EHQV2
EHQV3
EHRH1
EHRH2
W1
4-KW Parameter Block
Word Program Time
32-KW Main Block
Word Program Time
Word Program Time for 0.13
and 0.18 Micron Product
Word Program Time for 0.25
Micron Product
4-KW Parameter Block
Erase Time
32-KW Main Block
Erase Time
Program Suspend Latency
Erase Suspend Latency
W2
Parameter
A
= +25 °C and nominal voltages.
W5
W3
W3
Intel
W10
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
£
Note
V
1,3
1,3
Advanced+ Boot Block Flash Memory (C3)
PP
W4
0.10
Typ
0.8
0.5
1.65 V–3.6 V
12
22
1
5
5
Max
0.30
200
200
2.4
10
20
W7
4
5
W6
W8
0.03
0.24
11.4 V–12.6 V
Typ
0.4
0.6
8
8
5
5
W9
W9
Max
0.12
185
185
10
20
1
4
5
Unit
µs
µs
µs
µs
s
s
s
s
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