TE28F160C3TC90 Intel, TE28F160C3TC90 Datasheet - Page 61

• Manufacturer Part Number: TE28F160C3TC90
• Description: IC FLASH 16MBIT 90NS 48TSOP
• Manufacturer: Intel

Specifications of TE28F160C3TC90

• Rohs Status: RoHS non-compliant
• Format - Memory: FLASH
• Memory Type: Advanced + Boot Block FLASH
• Memory Size: 16M (1M x 16)
• Speed: 90ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Other names: 845207

C.5
Datasheet
Offset
Offset
0x2C
0x2D
0x2D
0x1E
0x1F
0x20
0x21
0x22
0x23
0x24
0x25
0x26
0x27
0x28
0x2A
Table 30. Device Geometry Definition
Length
Length
14
1
1
1
1
1
1
1
1
1
1
2
2
1
4
Device Geometry Definition
V
“n” such that typical single word program time-out =2
“n” such that typical max. buffer write time-out = 2
“n” such that typical block erase time-out = 2
“n” such that typical full chip erase time-out = 2
“n” such that maximum word program time-out = 2
“n” such that maximum buffer write time-out = 2
“n” such that maximum block erase time-out = 2
“n” such that maximum chip erase time-out = 2
“n” such that device size = 2
Flash device interface:
“n” such that maximum number of bytes in write buffer = 2
Number of erase block regions within device:
Erase Block Region 1 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
Erase Block Region 2 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
PP
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
[programming] supply maximum program/erase voltage
with one or more contiguous same-size erase blocks.
28:00,29:00
x8 async
Description
Description
n
in number of bytes
28:01,29:00
Intel
x16 async
n
ms
£
n
n
n
n
times typical
ms
Advanced+ Boot Block Flash Memory (C3)
times typical
times typical
n
n
µs
times typical
n
µs
x8/x16 async
28:02,29:00
n
Add.
1E:
1F:
20:
21:
22:
23:
24:
25:
26:
Add.
2A:
2B:
2C:
2D:
2E:
28:
29:
2F:
30:
31:
32:
33:
34:
27
Hex Code
Code
--C6
--0A
--05
--00
--00
--04
--00
--03
--00
Hex
--01
--00
--00
--00
--02
See
See
See
Table 31
Table 31
Table 31
Value
x16
12.6 V
512µs
Value
32 µs
0
2
NA
1 s
NA
NA
NA
8s
61