TC58DVG02A1FT Toshiba, TC58DVG02A1FT Datasheet - Page 31

• Manufacturer Part Number: TC58DVG02A1FT
• Description: IC FLASH 1GBIT 50NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58DVG02A1FT

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Internal addressing in relation with the Districts
Address input restriction for the Multi Block Erase operation
(Restriction)
Maximum one block should be selected from each District.
(Acceptance)
There is no order limitation of the District for the address input.
Any number of the Districts can be select for the erase operation.
So, for example, following operation are in acceptance.
Example 1 : (60) [District 2] (60) [District 0] (60) [District 1] (D0)
Example 2 : (60) [District 0] (60) [District 1] (60) [District 2] (60) [District 3] (D0)
It requires no mutual address relation between the selected blocks from each District.
To use Multi Block Erase operation, the internal addressing should be conscious in relation with the Districts.
In selecting the blocks for the Multi Block Erase operation, following is the restriction and acceptance.
The device consists of 4 Districts.
Each District consists from 1024 erase blocks.
The allocation rule is follows.
District 0: Block 0, Block 4, Block 8, Block 12,
District 1: Block 1, Block 5, Block 9, Block 13,
District 2: Block 2, Block 6, Block 10, Block 14,
District 3: Block 3, Block 7, Block 11, Block 15,
···.., Block 8188
···.., Block 8189
···.., Block 8190
···.., Block 8191
TC58DVG02A1FT00
2003-01-10 31/44