TC55VBM416AFTN55 Toshiba, TC55VBM416AFTN55 Datasheet - Page 4

• Manufacturer Part Number: TC55VBM416AFTN55
• Description: IC SRAM 16MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VBM416AFTN55

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 16M (1M x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DC CHARACTERISTICS
CAPACITANCE
I
I
I
I
l
l
I
I
C
C
Note:
SYMBOL
IL
OH
OL
LO
DDO1
DDO2
DDS1
DDS2
IN
OUT
SYMBOL
This parameter is periodically sampled and is not 100% tested.
Input Leakage
Current
Output High Current V
Output Low Current
Output Leakage
Current
Operating Current
Standby Current
PARAMETER
Input Capacitance
Output Capacitance
(Ta
25°C, f
PARAMETER
2) CE2
V
V
R/W
R/W
I
Other Input
R/W
I
Other Input
1)
2) LB
1)
3) LB
(Ta
CE
CE
CE
OUT
OUT
IN
OH
OL
1
1
1
V
V (at BYTE V
CE
CE
CE
DD
0.2 V or
0.2 V or
0 V~V
1
0.4 V
1
1
V
V
V
V
0 mA,
0 mA,
1 MHz)
V
V
0.2 V and CE2
IL
IH
DD
DD
IH
IL
40° to 85°C, V
0.2 V (at BYTE V
, LB
0.2 V, CE2
or OE
UB
0.2 V (at BYTE
V
V
UB
and CE2
DD
or CE2
IH
DD
V
0.2 V, LB
V
0.5 V
IH
DD
or CE2
0.2 V)
0.2 V)
/V
V
IH
IL
V
DD
UB
0.2 V, CE2
V
0.2 V/0.2 V
DD
IH
V
(at BYTE V
V
IL
, V
TEST CONDITION
V
IH
0.2 V)
V
V
or LB
V
V
DD
OUT
IL
V
DD
IN
OUT
and
0.2 V,
IL
UB
(at BYTE V
,
DD
DD
V
0.2
GND
DD
0.2 V and
0 V~V
GND
0.2 V,
DD
UB
V
3.3 V
V
TEST CONDITION
2.3 to 3.6 V)
DD
DD
DD
0.2 V)
DD
V
3.0 V
0.3 V
IH
or
0.2 V or
t
t
Ta
Ta
Ta
Ta
cycle
cycle
25°C
40~85°C
40~40°C
40~85°C
TC55VBM416AFTN55
0.2 V)
MIN
1 s
MIN
1 s
MIN
2.1
0.5
2003-12-25 4/14
MAX
10
10
TYP
0.9
MAX
35
30
15
1.0
1.0
8
3
1
3
8
UNIT
pF
pF
UNIT
mA
mA
mA
mA
mA
A
A
A