TC55VBM416AFTN55 Toshiba, TC55VBM416AFTN55 Datasheet - Page 9

• Manufacturer Part Number: TC55VBM416AFTN55
• Description: IC SRAM 16MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VBM416AFTN55

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 16M (1M x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

A0~A19 (Word Mode)
A-1~A19 (Byte Mode)
I/O1~16 (Word Mode)
I/O1~16 (Word Mode)
A0~A19 (Word Mode)
A-1~A19 (Byte Mode)
I/O1~16 (Word Mode)
I/O1~16 (Word Mode)
I/O1~8 (Byte Mode)
I/O1~8 (Byte Mode)
I/O1~8 (Byte Mode)
I/O1~8 (Byte Mode)
WRITE CYCLE 2 (
WRITE CYCLE 3 (CE2 CONTROLLED)
UB , LB
UB , LB
Address
Address
D
D
R/W
CE2
R/W
CE2
CE
OUT
CE
OUT
D
D
IN
IN
1
1
CE1
CONTROLLED)
t
t
AS
AS
Hi-Z
Hi-Z
(See Note 5)
(See Note 5)
(See Note 4)
t
t
(See Note 4)
COE
COE
t
t
BE
BE
t
t
t
t
WC
WC
ODW
ODW
t
t
t
t
CW
CW
CW
CW
t
t
BW
BW
t
t
WP
WP
VALID DATA IN
VALID DATA IN
t
t
DS
DS
TC55VBM416AFTN55
t
t
DH
DH
t
t
WR
WR
Hi-Z
Hi-Z
2003-12-25 9/14