ICB1FL02G Infineon Technologies, ICB1FL02G Datasheet - Page 5

• Manufacturer Part Number: ICB1FL02G
• Description: IC SMART BALLAST CONTROL PDSO-18
• Manufacturer: Infineon Technologies
• Type: PFC/Ballast Controllerr

Specifications of ICB1FL02G

• Frequency: 20 ~ 100 kHz
• Current - Supply: 650µA
• Voltage - Supply: 10.5 V ~ 17.5 V
• Operating Temperature: -25°C ~ 125°C
• Package / Case: DSO-18
• Packages: PG-DSO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output: -
• Lead Free Status / Rohs Status: Details
• Other names: ICB1FL02GXT; SP000204703

1
1.1
Datasheet Version 2.1
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
PFCZCD
PFCGD
RFRUN
PFCCS
PFCVS
LSGD
RFPH
LSCS
GND
Symbol
LSCS
LSGD
VCC
GND
PFCGD
PFCCS
PFCZCD PFC zero current detector
PFCVS
RFRUN
RFPH
RTPH
RES
LVS1
LVS2
n.e.
n.e.
HSGND
HSVCC
HSGD
HSGND
VCC
Pin Configuration and Description
Pin Configuration PG-DSO-18-1
10
1
2
3
4
5
6
7
8
9
Function
Low side current sense (inverter)
Low side gate drive (inverter)
Supply voltage
Controller ground
PFC gate drive
PFC current sense
PFC voltage sense
Set R for run frequency
Set R for preheating frequency
Set R for preheating time
Restart after lamp removal
Lamp voltage sense 1
Lamp voltage sense 2
Not existing
Not existing
High side ground
High side supply voltage
High side gate drive
High side ground
PG-DSO-18-2 (300mil)
20
19
18
17
16
15
14
13
12
11
HSGND
HSGD
HSVCC
HSGND
LVS2
LVS1
RES
RTPH
5
1.2
LSCS (Low side current sense, Pin 1)
This pin is directly connected to the shunt resistor
which is located between the Source terminal of the
low-side MOSFET of the inverter and ground.
Internal clamping structures and filtering measures
allow for sensing the Source current of the low-side
inverter MOSFET without additional filter components.
There is a first threshold of 0,8V, which provides a
couple of increasing steps of frequency during ignition
mode, if exceeded by the sensed current signal for a
time longer than 250ns. If the sensed current signal
exceeds a second threshold of 1,6V for longer than
400ns during all operating modes, a latched shut down
of the IC will be the result.
LSGD (Low side gate drive, Pin 2)
The Gate of the low-side MOSFET in a half-bridge
inverter topology is controlled by this pin. There is an
active L-level during UVLO (undervoltage lockout) and
a limitation of the max. H-level at 11V during normal
operation. Turning on the MOSFET softly (with reduced
di
from L-level to H-level. The fall time of the Gate drive
voltage is less than 50ns in order to turn off quickly.
This measure produces different switching speeds
during turn-on and turn-off as it is usually achieved with
a diode in parallel to a resistor in the Gate drive loop. It
is recommended to use a resistor of about 15Ohm
between drive pin and Gate in order to avoid
oscillations and in order to shift the power dissipation of
discharging the Gate capacitance into this resistor. The
dead time between LSGD signal and HSGD signal is
1800ns typically.
VCC (Supply voltage, Pin 3)
This pin provides the power supply of the ground
related section of the IC. There is a turn-on threshold at
14V and an UVLO threshold at 10,5V. Upper supply
voltage level is 17,5V. There is an internal zener diode
clamping Vcc at 16V (2mA typically). The zener current
is internally limited to 5mA max. For higher current
levels an external zener diode is required. Current
consumption during UVLO and during fault mode is
less than 150µA. A ceramic capacitor close to the
supply and GND pin is required in order to act as a low-
impedance power source for Gate drive and logic
signal currents.
GND (Ground, Pin 4)
This pin is connected to ground and represents the
ground level of the IC for supply voltage, Gate drive
and sense signals.
DRAIN
/dt), the Gate drive voltage rises within 220ns
Pin Configuration and Description
Pin Description
September 2008
ICB1FL02G