NCP5104DR2G ON Semiconductor, NCP5104DR2G Datasheet - Page 4

• Manufacturer Part Number: NCP5104DR2G
• Description: IC DRIVER HALF BRIDGE HV 8-SOIC
• Manufacturer: ON Semiconductor
• Type: High Side/Low Sider

Specifications of NCP5104DR2G

• Configuration: Half Bridge
• Input Type: Non-Inverting
• Delay Time: 620ns
• Current - Peak: 250mA
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 600V
• Voltage - Supply: 10 V ~ 20 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Product: Half-Bridge Drivers
• Rise Time: 160 ns
• Fall Time: 75 ns
• Propagation Delay Time: 620 ns
• Supply Voltage (max): 20 V
• Supply Voltage (min): - 0.3 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Bridge Type: Half Bridge
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: 2
• Output Voltage: 0.7 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NCP5104DR2G; NCP5104DR2GOSTR

1. Parameter guaranteed by design.
2. T
3. Turn−off propagation delay @ Vbridge = 600 V is guaranteed by design.
4. See characterization curve for Dt parameters variation on the full range temperature.
5. Timing diagram definition see: Figure 4, Figure 5 and Figure 6.
Output high short circuit pulsed current V
Output low short circuit pulsed current V
Output resistor (Typical value @ 25°C) Source
Output resistor (Typical value @ 25°C) Sink
High level output voltage, V
Low level output voltage V
Turn−on propagation delay (Vbridge = 0 V) (Note 2)
Turn−off propagation delay (Vbridge = 0 V or 50 V) (Note 3)
Shutdown propagation delay, when Shutdown is enabled
Shutdown propagation delay, when Shutdown is disabled
Output voltage rise time (from 10% to 90% @ V
Output voltage fall time (from 90% to 10% @ V
Propagation delay matching between the High side and the Low side
@ 25°C (Note 4)
Internal fixed dead time (Note 5)
Low level input voltage threshold
Input pull−down resistor (V
High level input voltage threshold
Logic “1” input bias current @ V
Logic “0” input bias current @ V
Vcc UV Start−up voltage threshold
Vcc UV Shut−down voltage threshold
Hysteresis on Vcc
Vboot Start−up voltage threshold reference to bridge pin
(Vboot_stup = Vboot − Vbridge)
Vboot UV Shut−down voltage threshold
Hysteresis on Vboot
Leakage current on high voltage pins to GND
(V
Consumption in active mode (Vcc = Vboot, fsw = 100 kHz and 1 nF load on
both driver outputs)
Consumption in inhibition mode (Vcc = Vboot)
Vcc current consumption in inhibition mode
Vboot current consumption in inhibition mode
ELECTRICAL CHARACTERISTIC
OUTPUT SECTION
DYNAMIC OUTPUT SECTION
INPUT SECTION
SUPPLY SECTION
BOOT
ON
= T
= V
OFF
BRIDGE
+ DT
= DRV_HI = 600 V)
DRV_XX
IN
BIAS
< 0.5 V)
−V
IN
IN
@ I
= 5 V @ 25°C
= 0 V @ 25°C
DRV_XX
Rating
DRV_XX
DRV
(V
DRV
@ I
CC
= Vcc, PW v 10 ms (Note 1)
= 0 V, PW v 10 ms (Note 1)
= 20 mA
DRV_XX
= V
CC
CC
boot
= 15 V) with 1 nF load
= 15 V) with 1 nF load
= 15 V, V
= 20 mA
http://onsemi.com
GND
= V
4
bridge
, −40°C < T
Vboot_shtdwn
Vboot_shtdwn
Vcc_shtdwn
Vboot_stup
I
Vcc_stup
Vcc_hyst
DRVsource
I
Symbol
I
V
HV_LEAK
V
DRVsink
t
t
ICC1
ICC2
ICC3
ICC4
sd_dis
DRV_H
sd_en
R
R
DRV_L
t
t
V
R
V
I
I
OFF
DT
ON
Dt
IN+
IN−
OH
t
t
OL
IN
IN
IN
r
f
J
< 125°C, Outputs loaded with 1 nF)
Min
400
2.3
8.0
7.3
0.3
8.0
7.3
0.3
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
T
J
−40°C to 125°C
Typ
250
500
620
100
100
620
520
200
250
200
0.7
0.2
8.9
8.2
0.7
8.9
8.2
0.7
30
10
85
35
10
50
−
−
5
−
5
4
Max
800
170
170
800
160
650
400
1.6
0.6
0.8
2.0
9.8
9.0
9.8
9.0
60
20
75
45
25
40
−
−
−
−
−
−
5
−
−
Units
mA
mA
mA
kW
mA
mA
mA
mA
mA
mA
ns
ns
ns
ns
ns
ns
ns
ns
W
W
V
V
V
V
V
V
V
V
V
V