FAN7383MX_WS Fairchild Semiconductor, FAN7383MX_WS Datasheet - Page 6

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FAN7383MX_WS

Manufacturer Part Number
FAN7383MX_WS
Description
IC GATE DVR HALF BRIDGE 14-SOIC
Manufacturer
Fairchild Semiconductor
Type
High Side Driverr
Datasheet

Specifications of FAN7383MX_WS

Configuration
Half Bridge
Input Type
Non-Inverting
Delay Time
500ns
Current - Peak
350mA
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
600V
Voltage - Supply
15 V ~ 20 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Product
Half-Bridge Drivers
Rise Time
100 ns
Fall Time
80 ns
Supply Voltage (max)
20 V
Supply Voltage (min)
15 V
Supply Current
650 uA
Maximum Power Dissipation
1 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Bridge Type
Half Bridge
Maximum Turn-off Delay Time
170 ns
Maximum Turn-on Delay Time
670 ns
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
Output Current
350 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FAN7383 Rev. 1.0.3
© 2006 Fairchild Semiconductor Corporation
Electrical Characteristics
V
referenced to GND. The V
outputs HO and LO.
Note:
5.This parameter guaranteed by design.
SUPPLY CURRENT SECTION
POWER SUPPLY SECTION
GATE DRIVER OUTPUT SECTION
LOGIC INPUT SECTION (INPUT AND SHUTDOWN)
Symbol
V
BIAS
V
V
V
V
V
I
DDUVH
BSUVH
I
I
I
DDUV+
BSUV+
SD+
I
V
R
SD
DDUV-
BSUV-
V
SD-
QDD
V
I
QBS
PBS
PDD
I
V
I
I
V
I
IN+
O+
LK
IN-
OH
O-
OL
PD
IH
IL
S
(5)
(V
DD
, V
Quiescent V
Quiescent V
V
Operating V
Operating V
Offset supply leakage current
V
positive going threshold
V
negative going threshold
V
lockout hysteresis
High-level output voltage, V
Low-level output voltage, V
Output high short-circuit pulse current
Output low short-circuit pulsed current
Allowable negative V
signal propagation to HO
Shutdown "1" input voltage
Shutdown "0" input voltage
Input pull-down resistance
Logic "1" input voltage
Logic "0" input voltage
Logic "1" input bias current
Logic "0" input bias current
DD
DD
DD
DD
BS
supply current at shutdown mode
and V
and V
and V
) = 15.0V, R
BS
BS
BS
BS
DD
BS
DD
supply under-voltage
supply under-voltage
supply under-voltage
Parameter
supply current
O
supply current
supply current
supply current
and I
DT
S
= GND, T
O
pin voltage for IN
parameters are referenced to V
O
BIAS
-V
A
O
= 25°C, unless otherwise specified. The V
V
V
V
SD=GND
f
f
V
I
V
V
V
IN
IN
O
IN
IN
B
O
O
IN
IN
=20mA
=20kHz,rms value
=20kHz,rms value, R
=V
=0V, V
=15V, V
=0V or 5V
=0V or 5V, R
6
=5V
=0V
S
=600V
IN
Condition
IN
=5V with PW<10µs
=0V with PW<10µs
S
and GND and are applicable to the respective
DT
=0Ω
DT
=0Ω
Min. Typ. Max. Unit
10.7
10.0
500
IN
250
2.9
2.9
and I
10.8
11.6
650
650
400
950
350
650
-9.8
100
0.8
35
50
IN
parameters are
www.fairchildsemi.com
1200
12.5
11.6
-7.0
900
900
700
100
1.0
0.6
1.2
2.0
1.2
90
10
mA
mA
μA
μA
μA
V
V
V
V
V
V
V
V

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