2ED020I12-F Infineon Technologies, 2ED020I12-F Datasheet - Page 4

• Manufacturer Part Number: 2ED020I12-F
• Description: IC DRIVER IGBT 2-CHAN PDSO-18-1
• Manufacturer: Infineon Technologies

Specifications of 2ED020I12-F

• Configuration: Half Bridge
• Input Type: Non-Inverting
• Delay Time: 85ns
• Current - Peak: 1A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 1200V
• Voltage - Supply: 14 V ~ 18 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: DSO-20 (18 Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2ED020I12FIXT; 2ED020I12FXT; SP000107512

High and Low Side Driver
Final Data
2ED020I12-FI
Overview
1
Overview
The 2ED020I12-FI is a high voltage, high speed power MOSFET and IGBT driver with
interlocking high and low side referenced outputs. The floating high side driver may be
supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic
input of each driver the 2ED020I12-FI is equipped with a dedicated shutdown input. All
logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. Propagation
delays are matched to simplify use in high frequency applications. Both drivers are
designed to drive an N-channel power MOSFET or IGBT which operate up to 1.2 kV. In
addition, a general purpose operational amplifier and a general purpose comparator are
provided which may be used for instance for current measurement or overcurrent
detection.
Final Datasheet
4
September 2007