VND810-E STMicroelectronics, VND810-E Datasheet - Page 9
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VND810-E
Manufacturer Part Number
VND810-E
Description
IC DRIVER HIGH SIDE 2CH 16-SOIC
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet
1.VND810TR-E.pdf
(20 pages)
Specifications of VND810-E
Input Type
Non-Inverting
Number Of Outputs
2
On-state Resistance
160 mOhm
Current - Peak Output
5A
Voltage - Supply
5.5 V ~ 36 V
Mounting Type
Surface Mount
Package / Case
16-SOIC (3.9mm Width)
Switch Type
High Side
Power Switch Family
VND810
Power Switch On Resistance
160mOhm
Output Current
5A
Mounting
Surface Mount
Supply Current
12uA
Package Type
SO
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
16
Power Dissipation
8.3W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VND810-E
Manufacturer:
ST
Quantity:
1 192
Figure 8. Application Schematic
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
can be used with any type of load.
The following is an indication on how to dimension the
R
where -I
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
battery situations) is:
P
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
produce a shift (I
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
D
GND
1) R
2) R
= (-V
resistor.
GND
GND
CC
GND
PROTECTION
)
2
/R
600mV / I
is the DC reverse ground pin current and can
GND
V
+5V
CC
C
S(on)max
) / (-I
S(on)max
GND
GND
R
R
R
R
* R
prot
prot
prot
prot
)
(when V
NETWORK
GND
.
+5V
) in the input thresholds
+5V
S(on)max
CC
<0: during reverse
STATUS2
INPUT2
GND
STATUS1
INPUT1
becomes the
GND
AGAINST
only). This
GND
.
will
V
GND
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2 (see
below).
Solution 2: A diode (D
A resistor (R
D
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
LOAD DUMP PROTECTION
D
load dump peak voltage exceeds V
The same applies if the device will be subject to
transients on the V
shown in the ISO T/R 7637/1 table.
R
GND
ld
GND
GND
is necessary (Voltage Transient Suppressor) if the
if the device will be driving an inductive load.
V
CC
D
GND
GND
=1k
OUTPUT2
CC
OUTPUT1
GND
line that are greater than the ones
should be inserted in parallel to
) in the ground line.
CC
j
max DC rating.
D
600mV) in the
ld
VND810-E
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