BTS410E2 Infineon Technologies, BTS410E2 Datasheet - Page 4

• Manufacturer Part Number: BTS410E2
• Description: IC SWITCH PWR 65V TO-220AB-5
• Manufacturer: Infineon Technologies
• Series: PROFET®r
• Type: High Sider

Specifications of BTS410E2

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 190 mOhm
• Current - Output / Channel: 1.8A
• Current - Peak Output: 12A
• Voltage - Supply: 4.7 V ~ 42 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-5 (Bent and Staggered Leads)
• Device Type: High Side
• Peak Output Current: 1.8A
• Input Delay: 125µs
• Output Delay: 85µs
• Supply Voltage Range: 4.7V To 42V
• Driver Case Style: TO-220AB
• No. Of Pins: 5
• Operating Temperature Range: -40°C
• Switch Type: High Side
• Power Switch Family: BTS 410 E2
• Input Voltage: -0.5 to 6V
• Power Switch On Resistance: 190mOhm
• Output Current: 1.6A
• Mounting: Through Hole
• Supply Current: 1mA
• Package Type: TO-220AB
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 5 +Tab
• Power Dissipation: 50W
• Rohs Compliant: No
• Output Resistance: 0.19ohm
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: BTS410E2; BTS410E2IN; BTS410E2NK; SP000011233

Parameter and Conditions
at T
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
( max 450 s if V
Repetitive overload shutdown current limit
Short circuit shutdown delay after input pos. slope
Output clamp (inductive load switch off)
at V
Short circuit shutdown detection voltage
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1)
Diagnostic Characteristics
Open load detection current
8
9
10
11
Semiconductor Group
)
)
min value valid only, if input "low" time exceeds 60 s
V
) Short circuit current limit for max. duration of t
) Requires 150
(pin 3 to 5)
V
(on-condition)
ON
j
Add I
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
ON
= 25 °C, V
OUT
> V
= 8 V, T
= V
ST
ON(SC)
, if I
bb
bb
ST
- V
,
j
= 12 V unless otherwise specified
= T
> 0, add I
ON(CL)
ON
resistor in GND connection. The reverse load current through the intrinsic drain-source
jt
> V
(see timing diagrams, page 11)
9)
I
L
ON(SC)
IN
= 40 mA, T
, if V
I
L
= 1 A, T
11
IN
)
)
>5.5 V
T
j
j
j
T
=-40..+150°C:
=-40..+150°C: V
=-40..+150°C:
j
=-40 ..150°C:
T
j
T
=+150°C:
d(SC) max
T
j
j
=-40°C:
=25°C:
4
10
)
,
=450 s, prior to shutdown
I
I
t
V
T
-V
I
L(SCp)
L(SCr)
d(SC)
L (OL)
Symbol
jt
T
ON(CL)
ON(SC)
bb
jt
150
min
61
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9
4
2
Values
8.5
typ
12
68
10
--
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--
--
--
--
--
5
BTS 410 E2
2003-Oct-01
max
450
150
23
15
73
75
32
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--
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Unit
mA
°C
A
A
V
V
K
V
s