BTS410E2 Infineon Technologies, BTS410E2 Datasheet - Page 6

• Manufacturer Part Number: BTS410E2
• Description: IC SWITCH PWR 65V TO-220AB-5
• Manufacturer: Infineon Technologies
• Series: PROFET®r
• Type: High Sider

Specifications of BTS410E2

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 190 mOhm
• Current - Output / Channel: 1.8A
• Current - Peak Output: 12A
• Voltage - Supply: 4.7 V ~ 42 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-5 (Bent and Staggered Leads)
• Device Type: High Side
• Peak Output Current: 1.8A
• Input Delay: 125µs
• Output Delay: 85µs
• Supply Voltage Range: 4.7V To 42V
• Driver Case Style: TO-220AB
• No. Of Pins: 5
• Operating Temperature Range: -40°C
• Switch Type: High Side
• Power Switch Family: BTS 410 E2
• Input Voltage: -0.5 to 6V
• Power Switch On Resistance: 190mOhm
• Output Current: 1.6A
• Mounting: Through Hole
• Supply Current: 1mA
• Package Type: TO-220AB
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 5 +Tab
• Power Dissipation: 50W
• Rohs Compliant: No
• Output Resistance: 0.19ohm
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: BTS410E2; BTS410E2IN; BTS410E2NK; SP000011233

Truth Table
L = "Low" Level
H = "High" Level
Terms
13
14
15
Semiconductor Group
Normal
operation
Open load
Short circuit
to GND
Short circuit
to V
Overtem-
perature
Under-
voltage
Overvoltage
) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
) Low resistance short V
) No current sink capability during undervoltage shutdown
V
bb
open load detection.
bb
V
IN
I IN
V ST
I ST
2
4
Input-
level
IN
ST
H
H
H
H
H
H
H
L
L
L
L
L
L
L
R
X = don't care
GND
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
PROFET
GND
bb
3
1
V
Output
bb
level
I bb
to output may be detected in ON-state by the no-load-detection
13 )
I GND
H
H
H
H
L
L
L
L
L
L
L
L
L
OUT
5
I L
412
L
L
B2
H
H
H
H
H
L
L
L
L
L
15)
15)
L
L
Z = high impedance, potential depends on external circuit
V OUT
V ON
Status
H (L
410
L
L
D2
H
H
H
H
H
15)
15)
L
L
L
L
L
L
6
14)
Input circuit (ESD protection)
ZD
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
)
I1
H (L
E2/F2
6 V typ., ESD zener diodes are not to be used as
410
H
H
H
H
H
H
H
H
H
L
L
L
L
14)
)
IN
H (L
ZD
410
G2
H
H
H
H
H
H
H
H
H
H
ESD-
L
L
L
R
I1
14)
I
ZD
)
I2
GND
410
H2
H
H
H
H
H
H
H
H
H
L
L
L
L
L
I
I
BTS 410 E2
2003-Oct-01