TLE7189F Infineon Technologies, TLE7189F Datasheet - Page 26

• Manufacturer Part Number: TLE7189F
• Description: IC DRIVER 3PH BRIDGE 48-VQFN
• Manufacturer: Infineon Technologies
• Type: High Side/Low Sider

Specifications of TLE7189F

• Applications: DC Motor Driver, 3 Phase
• Number Of Outputs: 1
• Voltage - Supply: 5.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN
• Rise Time: 400 ns
• Fall Time: 230 ns
• Supply Voltage (min): 5.5 V
• Supply Current: 110 mA
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Bridge Type: 3-Phase Bridge
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 3
• Packages: PG-VQFN-48
• Operating Range: 5.5 - 28.0 V
• Iq: 30 ?A
• Turn On/off Current: 1.5/ 1.5 A
• D.c.-range @ 20khz: 0...100%
• Numbers Of Integrated Opamps For Load Current Measurement: 3.0
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output: -
• Voltage - Load: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SP000248208; TLE7189F; TLE7189FINTR

6.1
Please refer also to the simplified application example.
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Data Sheet
Three separated bulk capacitors C
Three separated ceramic capacitors C
Each of the 3 bulk capacitors C
bridges and should be placed very close to it
The components within one half bridge should be placed close to each other: high side MOSFET, low side
MOSFET, bulk capacitor C
a loop that should be as small and tight as possible. The traces should be short and wide
The three half bridges can be separated; yet, when there is one common GND referenced shunt resistor for
the three half bridges the sources of the three low side MOSFETs should be close to each other and close to
the common shunt resistor
VDH is the sense pin used for short circuit detection; VDH should be routed (via Rvdh) to the common point
of the drains of the high side MOSFETs to sense the voltage present on drain high side
CB2 is the buffer capacitor of charge pump 2; its negative terminal should be routed to the common point of
the drains of the high side MOSFETs as well - this connection should be low inductive / resistive
Additional R-C snubber circuits (R and C in series) can be placed to attenuate/suppress oscillations during
switching of the MOSFETs, there may be one or two snubber circuits per half bridge, R (several Ohm) and C
(several nF) must be low inductive in terms of routing and packaging (ceramic capacitors)
the exposed pad on the backside of the VQFN is recommended to connect to GND
Layout Guide Lines
B
and ceramic capacitor C
B
and each of the 3 ceramic capacitors C
B
should be used - one per half bridge
C
should be used - one per half bridge
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C
(C
B
and C
C
are in parallel) and the shunt resistor form
C
should be assigned to one of the half
Application Description
Rev. 2.1, 2007-05-30
TLE7189F