MCP1631HV-500E/ST Microchip Technology, MCP1631HV-500E/ST Datasheet - Page 8

IC INTEGRATED PWM HS 20TSSOP

MCP1631HV-500E/ST

Manufacturer Part Number
MCP1631HV-500E/ST
Description
IC INTEGRATED PWM HS 20TSSOP
Manufacturer
Microchip Technology

Specifications of MCP1631HV-500E/ST

Package / Case
20-TSSOP
Pwm Type
Current Mode
Number Of Outputs
1
Frequency - Max
2MHz
Duty Cycle
10%
Voltage - Supply
3.5 V ~ 16 V
Buck
Yes
Boost
No
Flyback
No
Inverting
No
Doubler
No
Divider
No
Cuk
No
Isolated
Yes
Operating Temperature
-40°C ~ 125°C
Frequency-max
2MHz
Output Voltage
3.3 V to 5 V
Output Current
250 mA
Input Voltage
3 V to 5.5 V
Switching Frequency
2 MHz
Operating Temperature Range
- 40 C to + 125 C
Mounting Style
SMD/SMT
Frequency
1MHz
Digital Ic Case Style
TSSOP
No. Of Pins
20
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
MCP1631RD-DCPC1 - REF DES BATT CHARG OR LED DRIVERMCP1631RD-MCC2 - REFERENCE DESIGN MCP1631HV
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
MCP1631/HV/MCP1631V/VHV
DC CHARACTERISTICS (CONTINUED)
TEMPERATURE SPECIFICATIONS
DS22063A-page 8
Electrical Specifications: Unless otherwise noted, V
V
Line Regulation
Load Regulation
Dropout Voltage
Note 2, Note 5
Output Delay Time
Output Noise
Power Supply Ripple Rejection
Ratio
Protection Features
Thermal Shutdown
Thermal Shutdown Hysteresis
Note 1:
Electrical Specifications: Unless otherwise indicated, all limits are specified for: V
Temperature Ranges
Operating Junction Temperature
Range
Storage Temperature Range
Maximum Junction Temperature
Package Thermal Resistances
Thermal Resistance, 20L-TSSOP
Thermal Resistance, 20L-SSOP
Thermal Resistance, 20L-QFN
DD
for typical values = 5.0V, T
2:
3:
4:
5:
Parameters
External Oscillator Input (OSC
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
The minimum V
TCV
temperature range. V
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
Parameters
OUT
= (V
OUT-HIGH
IN
must meet two conditions: V
A
for typical values = +25°C, T
OUT-LOW
- V
V
(V
T
OUT-LOW
DROPOUT
ΔV
ΔV
T
SHD_HYS
PSRR
OUT
V
T
Sym
DELAY
V
e
SHD
OUT
OUT
OUT
IN
N
IN
= lowest voltage measured over the temperature range.
)
Sym
θ
θ
θ
) rise and fall times between 10 ns and 10 µs were determined during device
T
T
T
/
/
JA
JA
JA
A
J
J
) *10
6
OUT(MAX)
/ (V
IN
Min
-0.3
-2.5
Min
-40
-65
= 3.0V to 5.5V, F
R
* ΔTemperature), V
IN
+ V
A
≥ 3.5V and V
= -40°C to +125°C for all minimum and maximums.
DROPOUT(MAX)
89.3
Typ
90
43
1000
±0.1
±1.0
Typ
330
525
150
44
18
8
OSC
IN
+125
+150
+150
≥ (V
OUT-HIGH
Max
= 1 MHz with 10% Duty Cycle, C
Max
+0.3
+2.5
650
725
or 3.5V, whichever is greater.
OUT(MAX)
IN
+ 3.0V to 5.5V
= highest voltage measured over the
Units
(Hz)
°C/W
°C/W
°C/W
Units
%/V
°C
°C
°C
µV/
mV
mV
dB
µs
°C
°C
%
+ V
1/2
DROPOUT(MAX)
Steady State
Transient
Typical 4 Layer board with inter-
connecting vias
Typical 4 Layer board with inter-
connecting vias
Typical 4 Layer board with inter-
connecting vias
(V
V
I
I
I
V
I
1 µF
f = 100 Hz, C
µA, V
C
© 2007 Microchip Technology Inc.
L
L
L
R
L
IN
IN
IN
OUT(MAX)
= 1.0 mA to 250 mA, Note 4
= 250 mA, V
= 250 mA, V
L
= 50 mA, f = 1 kHz, C
OUT
= 50Ω resistive
= 0V to 6V, V
= 0 µF, V
≤ 16V Note 2
INAC
.
= 100 mV pk-pk,
Conditions
Conditions
).
+ V
R
OUT
IN
R
R
= 1.2V
DROPOUT(MAX)
= 0.1 µF,
= 5.0V
= 3.3V
OUT
= 1 µF, I
= 90% V
OUT
L
= 100
=
) ≤
R
,

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