CS5124XD8 ON Semiconductor, CS5124XD8 Datasheet - Page 4

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CS5124XD8

Manufacturer Part Number
CS5124XD8
Description
IC CTRLR PWM CURRENT MODE 8-SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of CS5124XD8

Pwm Type
Current Mode
Number Of Outputs
1
Frequency - Max
440kHz
Duty Cycle
85%
Voltage - Supply
7.6 V ~ 20 V
Buck
No
Boost
No
Flyback
Yes
Inverting
No
Doubler
No
Divider
No
Cuk
No
Isolated
Yes
Operating Temperature
-40°C ~ 105°C
Package / Case
8-SOIC (3.9mm Width)
Frequency-max
440kHz
Output Voltage
- 0.3 V to + 20 V
Output Current
200 mA
Mounting Style
SMD/SMT
Switching Frequency
440 KHz
Operating Supply Voltage
7.7 V to 20 V
Maximum Operating Temperature
+ 135 C
Fall Time
25 ns
Minimum Operating Temperature
- 40 C
Rise Time
45 ns
Synchronous Pin
No
Topology
Flyback, Forward
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CS5124XD8G
Manufacturer:
ON Semiconductor
Quantity:
34
Company:
Part Number:
CS5124XD8G
Quantity:
4 900
ELECTRICAL CHARACTERISTICS (continued)
I
SENSE
Soft−Start
Current Sense
Voltage Feedback
Output Gate Drive
Thermal Shutdown
3. Not tested in production. Specification is guaranteed by design.
Soft−Start Charge Current
Soft−Start Discharge Current
V
Peak Soft−Start Charge Voltage
Valley Soft−Start Discharge Voltage
First Current Sense Threshold
Second Current Sense Threshold
I
Leading Edge Blanking Time
Internal Offset
V
V
V
Maximum Sleep Pull−down Voltage
GATE High (AC)
GATE Low (AC)
GATE High Clamp Voltage
Rise Time
Fall TIme
Thermal Shutdown Temperature
Thermal Enable Temperature
Thermal Hysteresis
SENSE
SS
FB
FB
FB
Rise
Pull−up Res.
Clamp Voltage
Fault Voltage Threshold
Voltage when V
= 0 V, C
to GATE Prop. Delay
Characteristic
V(CC)
= 0.33 mF, C
FB
Begins to
GATE
= 1.0 nF (ESR = 10 W ; C
V
At max duty cycle
0 to 700 mV pulse into I
0 to 400 mV pulse into I
Note 3
V
Series resistance < 1.0 W (Note 3)
Series resistance < 1.0 W (Note 3)
V
Measure GATE rise time,
Measure GATE fall time,
(Note 3) GATE low
(Note 3) GATE switching
(Note 3)
FB
CC
CC
1.0 V < GATE < 9.0 V V
9.0 V > GATE > 1.0 V V
= 300 mV
= 6.0 V, I
= 20 V
OUT
(−40 C
Test Conditions
http://onsemi.com
= 1.0 mA
SS
SENSE
SENSE
T
J
= 470 pF; C
CC
CC
4
125 C; −40 C
= 12 V
= 12 V
(after blanking time)
V(FB)
= 100 pF, unless otherwise specified.)
T
A
105 C, 7.60 V
V
CC
1.40
2.63
Min
11.0
200
170
250
460
135
100
7.0
0.5
4.7
2.9
60
90
15
− 1.0
V
V
CC
CC
10.0
1.62
2.90
13.5
Typ
275
195
275
130
490
150
125
4.9
4.3
1.2
0.0
10
90
60
45
25
25
− 0.5
20 V, UVLO = 3.0 V,
Max
1.80
3.15
16.0
400
215
315
130
180
520
165
150
8.1
2.0
0.5
13
65
55
35
Unit
mA
mV
mV
mV
mV
mV
kW
mA
ns
ns
ns
ns
V
V
V
V
V
V
V
C
C
C

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