MAX1809EEE+ Maxim Integrated Products, MAX1809EEE+ Datasheet - Page 2

• Manufacturer Part Number: MAX1809EEE+
• Description: IC DDR TERMINATION 16-QSOP
• Manufacturer: Maxim Integrated Products

Specifications of MAX1809EEE+

• Applications: Converter, DDR
• Voltage - Input: 3 ~ 5.5 V
• Number Of Outputs: 1
• Voltage - Output: 1.1 ~ 5.5 V
• Operating Temperature: 0°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-QSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
V
IN to V
GND to PGND.....................................................................±0.3V
SHDN, SS, FB, T
LX Current (Note 1).............................................................±4.7A
REF Short Circuit to GND Duration ............................Continuous
3A, 1MHz, DDR Memory Termination Supply
Note 1: LX has clamp diodes to PGND and IN. If continuous current is applied through these diodes, thermal limits must be
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
2
Input Voltage
Feedback Voltage Accuracy
(V
Feedback Load Regulation Error
External Reference Voltage
Range
Reference Voltage
Reference Load Regulation
PMOS Switch
On-Resistance
NMOS Switch
On-Resistance
Current-Limit Threshold
Switching Frequency
No Load Supply Current
Shutdown Supply Current
Thermal-Shutdown Threshold
Undervoltage Lockout Threshold
FB Input Bias Current
Off-Time
Startup Off-Time
On-Time
CC
EXTREF to GND.......................................-0.3V to (V
IN
FB
, IN to GND ........................................................-0.3V to +6V
_______________________________________________________________________________________
= V
- V
CC
CC
observed.
EXTREF
.............................................................................±0.3V
PARAMETER
= 3.3V, V
)
OFF
, R
EXTREF
REF
,
= 1.1V, T
SYMBOL
A
V
V
R
R
I
EXTREF
I
= 0°C to +85°C, unless otherwise noted. Typical values are at T
IN
∆V
V
SHDN
NMOS
LIMIT
t
PMOS
f
I
t
I
OFF
I
SW
ON
REF
CC
FB
IN
,V
FB
CC
V
V
I
V
I
I
I
V
(Note 3)
f
f
SHDN = GND, I
Hysteresis = 15°C
V
V
R
R
R
(Note 3)
LOAD
REF
LX
LX
SW
SW
IN
EXTREF
IN
IN
CC
FB
TOFF
TOFF
TOFF
= 0.5A
= 0.5A
CC
= V
= V
> V
= 500kHz
= 500kHz
= V
= -1µA to +10µA
falling, hysteresis = 90mV
= -3A to +3A, V
= 30.1kΩ
= 110kΩ
= 499kΩ
+ 0.3V)
CC
CC
LX
EXTREF
= 1.25V (Note 2)
= 3V to 5.5V, I
= 3V to 5.5V
+ 0.1V
CC
CONDITIONS
V
V
V
V
IN
IN
IN
IN
+ I
Continuous Power Dissipation (T
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
= 4.5V
= 3V
= 4.5V
= 3V
EXTREF
IN
28-Pin QFN (derate 20mW/°C above +70°C;
16-Pin QSOP (derate 12.5mW/°C above +70°C;
part mounted on 1in
part mounted on 1in
LOAD
= 1.25V
= 0,
2
2
of 1oz copper) ..............................1.6W
of 1oz copper) .................................1W
V
1.078
MIN
0.01
0.24
0.35
REF
3.0
-12
3.5
2.5
0.9
3.8
0
A
A
-
= +70°C)
= +25°C.)
4 x t
1.100
TYP
0.30
110
160
0.5
4.1
2.6
1.0
4.5
<1
20
90
70
80
16
60
1
OFF
1.122
MAX
V
0.37
+12
200
250
150
200
250
5.5
1.7
2.0
4.7
2.7
1.1
5.2
15
IN
1
-
UNITS
MHz
mΩ
mΩ
mV
mV
mV
mA
µA
°C
nA
µs
µs
µs
V
V
V
A
V